Related papers: Quantum transport in double-gated graphene devices
Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous…
Two-dimensional materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain could completely turn off the…
Though research on graphene by itself has waned, the interest in moire materials, materials made with stacked layers of graphene with a rotational twist between the layers, has exploded in popularity. These layered devices show a key…
The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a…
The minimum of 4-terminal conductance occurring at its charge neutral point has proven to be a robust empirical feature of graphene, persisting with changes to temperature, applied magnetic field, substrate, and layer thickness, though the…
In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different transport properties in trilayer graphene (TLG) with…
We investigate double quantum dots defined by electrostatic gating in semiconductor PbTe nanowire devices. We perform transport measurements to obtain charge stability diagrams distinguished by negligible separation between paired triple…
Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing…
Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand,…
The band structure of Bernal-stacked bilayer graphene can be tuned using double-gated transistors to apply a perpendicular electric field that generates an interlayer potential energy difference $\Delta$. Dielectric breakdown limits the…
We discuss transport through double gated single and few layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular…
Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual…
We theoretically investigate a folded bilayer graphene structure as an experimentally realizable platform to produce the one-dimensional topological zero-line modes. We demonstrate that the folded bilayer graphene under an external gate…
We investigate electronic transport in dual-gated twisted bilayer graphene. Despite the sub-nanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of…
Dirac-electronic tunneling and nonlinear transport properties with both finite and zero energy bandgap are investigated for graphene with a tilted potential barrier under a bias. For validation, results from a finite-difference based…
Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer…
We have performed a theoretical study of electronic transport in single and bilayer graphene based on the standard linear-response (Kubo) formalism and continuum-model descriptions of the graphene band structure. We are focusing especially…
As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topology of a material's Fermi surface. Using tetralayer graphene…
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities…
We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly,…