Related papers: Carrier-density-controlled anisotropic spin suscep…
We report measurements of magneto-resistance commensurability peaks, induced by a square array of anti-dots, in GaAs (311)A two-dimensional holes as a function of applied in-plane strain. The data directly probe the shapes of the Fermi…
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect…
In a two-dimensional quantum dot in a GaAs heterostructure, the spin-orbit scattering rate is substantially reduced below the rate in a bulk two-dimensional electron gas [B.I. Halperin et al, Phys. Rev. Lett. 86, 2106 (2001)]. Such a…
Motivated by recent all optical NMR experiments\cite{Awschalom1,Awschalom2} on GaAs quantum wells, we propose new experiments that would involve creating spatially modulated nuclear spin profiles. Due to the hyperfine coupling these would…
We present a theory predicting how the linear magnetotransport of a two-dimensional electron gas is modified by a passive electromagnetic cavity resonator where no real photons are injected nor created. For a cavity photon mode with…
We study a simple model of a quantum Hall system with the electrons confined to a linear, narrow channel. The system is mapped to a 1D system which in the low-energy approximation has the form of a Luttinger liquid with different…
We report effective mass (m*) measurements, via analyzing the temperature dependence of the Shubnikov-de Haas oscillations, for dilute, interacting, two-dimensional electron systems (2DESs) occupying a single conduction-band valley in AlAs…
We report on two sub-band transport in double gate SiO$_2$-Si-SiO$_2$ quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total…
The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric…
The electric-field-induced resonant spin polarization of a two-dimensional hole gas described by Luttinger Hamiltonian with structural inversion asymmetry and Zeeman splitting in a perpendicular magnetic field was studied. The spin…
When an electron or hole is in a conduction band of a crystal, it can be very different from 2, depending upon the crystalline anisotropy and the direction of the applied magnetic induction ${\bf B}$. In fact, it can even be 0! To…
We consider various exchange-driven electronic instabilities in semiconductor double-layer systems in the absence of any external magnetic field. We establish that there is no exchange-driven bilayer to monolayer charge transfer instability…
There has been a surge of recent interest in the role of anisotropy in interaction-induced phenomena in two-dimensional (2D) charged carrier systems. A fundamental question is how an anisotropy in the energy-band structure of the carriers…
The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in…
We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi…
This paper reviews the spin orientation of spin-3/2 holes in quantum wells. We discuss the Zeeman and Rashba spin splitting in hole systems that are qualitatively different from their counterparts in electron systems. We show how a…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors…
The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions…
We present calculations of the spin and phase relaxation rates in GaAs/AlGaAs $p$-type quantum wells. These rates are used to derive the temperature dependence of the weak-localization correction to the conductivity. In $p$-type quantum…