Related papers: Spin-polarized tunneling current through a thin fi…
We investigate the charge conductivity and current-induced spin polarization on the surface state of a three-dimensional topological insulator by including the hexagonal warping effect of Fermi surface both in classical and quantum…
Topological spintronics aims to exploit the spin-momentum locking in the helical surface states of topological insulators for spin-orbit torque devices. We address a fundamental question that still remains unresolved in this context: does…
We report electrical measurements of the current-induced spin polarization of the surface current in topological insulator devices where contributions from bulk and surface conduction can be disen- tangled by electrical gating. The devices…
We propose a spin-dependent resonant tunneling structure to efficiently inject spin-polarized current into silicon (Si). By means of a heavily doped polycrystalline Si (Poly-Si) between the ferromagnetic metal (FM) and Si to reduce the…
We study the transmission through single and double ferromagnetic barriers on the surface of a topological insulator. By adjusting the gate voltage and magnetization oreintation, the ferromagnetic barrier can be tuned into various…
We show that electron tunneling from edge states in two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization $P$ can be very close to…
Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the…
We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab-initio simulations, symmetry-based…
We study the transport properties of a hybrid junction made of a ferromagnetic lead in electrical connection with the helical edge modes of a two-dimensional topological insulator. In this system, the time reversal symmetry, which…
The topological insulator/ferromagnetic metal (TI/FMM) bilayer thin films emerged as promising topological surface state-based spintronic devices, most notably in their efficiency of current-induced spin torque. Using a cubic lattice model,…
Topological insulators host spin-polarized surface states born out of the energetic inversion of bulk bands driven by the spin-orbit interaction. Here we discover previously unidentified consequences of band-inversion on the surface…
We propose a hole-induced mechanism of spin-polarized current generation by circularly polarized synchrotron radiation and corresponding induced magnetization in magnetically-doped topological insulators…
Current generated spin polarization in topological insulator (TI) surface states due to spin-momentum locking has been detected recently using ferromagnet/tunnel barrier contacts, where the projection of the TI spin onto the magnetization…
We derive a kinetic equation for the electrons moving on the surface of a three-dimensional topological insulator. Due to the helical nature of the excitations backward scattering is suppressed in the collision integral, and the spin…
Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange…
We demonstrate that a quantum spin Hall current, spontaneously generated at the edge of a two-dimensional topological insulator, acts as a source of spin-pumping for a magnetic impurity with uniaxial anisotropy. One can then manipulate the…
Though the Fermi surface of surface states of a 3D topological insulator (TI) has zero magnetization, an arbitrary segment of the full Fermi surface has a unique magnetic moment consistent with the type of spin-momentum locking in hand. We…
Magnetic impurities on superconductors induce discrete bound levels inside the superconducting gap, known as Yu-Shiba-Rusinov (YSR) states. YSR levels are fully spin-polarized such that the tunneling between YSR states depends on their…
Understanding and control of spin degrees of freedom on the surfaces of topological materials are key to future applications as well as for realizing novel physics such as the axion electrodynamics associated with time-reversal (TR)…
We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces…