Related papers: Photoluminescence from Bi5(GaCl4)3 molecular cryst…
The photophysical properties of Bi82+ and Bi53+ polycations stabilized by [AlCl4]- have been studied experimentally and theoretically. The obtained product was thoroughly evaluated by powder X-ray diffraction and photoluminescence…
Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active…
We observed an intensive near-infrared luminescence in Bi-doped KAlCl4 polycrystalline material. Luminescence dependence on the excitation wavelength and temperature of the sample was studied. Our experimental results allow asserting that…
We report the observation of near-infrared photoluminescence from Te4(Ga2Cl7)2 and Te4(Al2Cl7)2 molecular crystals containing Te42+ polycations. The experimental and theoretical results clearly revealed that Te42+ polycation is one smart…
We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with…
Photoluminescence of non-aromatic supramolecular chemical assemblies has attracted considerable attention in recent years due to its potential for use in molecular sensing and imaging technologies. The underlying structural origins, the…
Bismuth (III) oxide (Bi2O3) has been highly studied as a photocatalyst for green hydrogen production due to its low band gap, yet its efficiency requires enhancement. This study synthesizes a defective and strained black Bi2O3 by severe…
Temperature behavior of the Bi+ center emission, excitation bands and luminescence decay law in KAlCl4 crystal are investigated. Abrupt changes of the monocation optical properties are observed at phase transitions of the host. The observed…
Gallium oxide (Ga2O3) is a wide-band-gap semiconductor promising for UV sensors and high power transistor applications, with Baliga's figure of merit that far exceeds those of GaN and SiC, second only to diamond. Engineering its band…
Currently, Fe doping in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features have been reported from multiple types of Ga2O3 samples…
For the first time, we report that a single crystal of (K-crypt)2Bi2 containing [Bi2]2+ displays ultra-broad near-infrared photoluminescence (PL) peaking at around 1190 nm and having a full width at the half maximum of 212 nm, stemming from…
Bismuth vanadate (BiVO4) has emerged as a highly prospective material for photoanodes in photoelectrochemical (PEC) water oxidation. However, current limitations with this material lie in the difficulties in producing stable and continuous…
Experimental and computer-modeling studies of spectral properties of crystalline AgCl doped with metal bismuth or bismuth chloride are performed. Broad near-IR luminescence band in the 0.8--1.2mkm range with time dependence described by two…
A comparative first-principles study of possible bismuth-related centers in TlCl and CsI crystals is performed and the results of computer modeling are compared with the experimental data. The calculated spectral properties of the bismuth…
Visible luminescence is observed from the composite of SiO2 with embedded silicon nanocrystallites produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the…
First-principle study of bismuth-related oxygen-deficient centers ($=$Bi$\cdots$Ge$\equiv$, $=$Bi$\cdots$Si$\equiv$, and $=$Bi$\cdots$Bi$=$ oxygen vacancies) in Bi$_2$O$_3$-GeO$_2$, Bi$_2$O$_3$-SiO$_2$, Bi$_2$O$_3$-Al$_2$O$_3$-GeO$_2$, and…
Photoelectrochemical water splitting is a promising route to produce hydrogen from solar energy. However, corrosion of semiconducting photoelectrodes remains a fundamental challenge for their practical application. The stability of BiVO4,…
The antimony-based chalcogenide Sb2Se3 is a rapidly emerging material for photonic phase change applications owing to its ultra-low optical losses at telecommunication wavelengths in both crystalline and amorphous phases. Here, we…
Ferroelectric materials with up-conversion luminescence (UCL) properties have potential opto-electric applications for display and sensing etc. Here, we demonstrate strong green UCL and enhanced electrical properties in Er3+-doped…
In the last decade the ns$^2$ cations (e.g., Pb$^{2+}$ and Sn$^{2+}$) based halides have emerged as one of the most exciting new classes of optoelectronic materials, as exemplified by for instance hybrid perovskite solar absorbers. These…