Related papers: Gate-controlled Persistent Spin Helix State in Mat…
The Rashba and Dresselhaus spin-orbit (SO) interactions in 2D electron gases act as effective magnetic fields with momentum-dependent directions, which cause spin decay as the spins undergo arbitrary precessions about these…
The spin-orbit interaction (SOI) in zincblende semiconductor quantum wells can be set to a symmetry point, in which spin decay is strongly suppressed for a helical spin mode. Signatures of such a persistent spin helix (PSH) have been probed…
A persistent spin helix (PSH) is a robust helical spin-density pattern arising in disordered 2D electron gases with Rashba $\alpha$ and Dresselhaus $\beta$ spin-orbit (SO) tuned couplings, i.e., $\alpha=\pm\beta$. Here we investigate the…
A persistent spin helix (PSH) in spin-orbit-coupled two-dimensional electron systems was recently predicted to exist in two cases: [001] quantum wells (QWs) with equal coupling strengths of the Rashba and the Dresselhaus interactions (RD),…
A general expression for the spin Hall conductivity (SHC) in the s-wave superconducting state at finite temperatures is derived. Based on the expression, we study the SHC in a two-dimensional electron gas model in the presence of Rashba…
The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin…
Energy-saving spintronics are believed to be implementable on the systems hosting persistent spin helix (PSH) since they support an extraordinarily long spin lifetime of carriers. However, achieving the PSH requires a unidirectional spin…
We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our…
The spin orbit interaction plays a crucial role in diverse fields of condensed matter, including the investigation of Majorana fermions, topological insulators, quantum information and spintronics. In III V zinc blende semiconductor…
Spin-orbit interaction (SOI) is a fundamental component for electrically driven spin qubits and hybrid superconducting-semiconducting systems. In particular, Rashba SOI (RSOI) is a key mechanism enabling all-electrical spin manipulation…
We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity…
The persistent spin helix (PSH) is robust against spin-independent scattering and renders an extremely long spin lifetime, which can improve the performance of potential spintronic devices. To achieve the PSH, a unidirectional spin…
The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers' spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC)…
Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to…
We study the influence of the phase relaxation process on Hall resistance and spin Hall current of a mesoscopic two-dimensional (2D) four-terminal Hall cross-bar with or without Rashba spin-orbit interaction (SOI) in a perpendicular uniform…
Finding a new class of materials supporting a long spin lifetime is essential in development of energy-saving spintronics, which is achievable by using a persistent spin helix (PSH) materials. However, for spintronic devices, the PSH states…
Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and…
We investigate the possibility of spin-preserving symmetries due to the interplay of Rashba and Dresselhaus spin-orbit coupling in n-doped zinc-blende semiconductor quantum wells of general crystal orientation. It is shown that a conserved…