Related papers: Diffusion at the Surface of Topological Insulators
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently,…
We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170 \mu m). Volume carrier density decreased with thickness,…
We study the effect of strong disorder in a 3-dimensional topological insulators with time-reversal symmetry and broken inversion symmetry. Firstly, using level statistics analysis, we demonstrate the persistence of delocalized bulk states…
In this chapter we review our work on the theory of quantum transport in topological insulator nanowires. We discuss both normal state properties and superconducting proximity effects, including the effects of magnetic fields and disorder.…
We study transport and optical properties of the surface states which lie in the bulk energy gap of a thin-film topological insulator. When the film thickness is comparable with the surface state decay length into the bulk, the tunneling…
Based on a self-consistent $t$-matrix approximation, we explore the influence of magnetic and nonmagnetic doping on the surface electronic states and conductivity of topological insulators. We show that warping parameter has a crucial…
Topological insulators are known to their metallic surface states, a result of strong-spin-orbital coupling, that show unique surface transport phenomenon. But these surface transports are buried in presence of metallic bulk conduction. We…
Topological insulators (TIs) are new insulating materials with exotic surface states, where the motion of charge carriers is described by the Dirac equations and their spins are locked in a perpendicular direction to their momentum. Recent…
We report semiconductor to metal-like crossover in temperature dependence of resistivity ($\rho$) due to the switching of charge transport from bulk to surface channel in three-dimensional topological insulator…
Interactions between the surface and the bulk in a strong topological insulator (TI) cause a finite lifetime of the topological surface states (TSS) as shown by the recent experiments. On the other hand, interactions also induce unitary…
Topological insulators (TI), with characteristic Dirac-fermion topological surface states (TSS), have emerged as a new class of electronic materials with rich potentials for both novel physics and device applications. However, a major…
Aiming at the future spintronics device applications of the spin-polarized surface states in three-dimensional topological insulator, a highly insulating bulk state and a tunable Dirac cone surface state are required. Here we employ a slab…
Topological protected surface states are one of the hallmarks of three-dimensional topological insulators. In this work we theoretically analyze the gate-voltage-effects on a quasi-3D layer of HgTe. We find that while the gapless surface…
Three-dimensional topological insulators are characterized by insulating bulk state and metallic surface state involving Dirac fermions that behave as massless relativistic particles. These Dirac fermions are responsible for achieving a…
Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be described by Dirac fermions. By using a tight-binding model, the transport properties of the surface states in a uniform magnetic field is…
We apply a novel analysis of the field and angle dependence of the quantum-oscillatory amplitudes in the unconventional superconductor Sr2RuO4 to map its Fermi surface in unprecedented detail, and to obtain previously inaccessible…
We review theoretical and experimental highlights in transport in two-dimensional materials focussing on key developments over the last five years. Topological insulators are finding applications in magnetic devices, while Hall transport in…
In the present paper we propose a mechanism of the structural instability with a periodic charge ordering in two-dimensional isotropic conductors with a closed Fermi surface which completely excludes the conventional nesting mechanism. We…
Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…
We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical…