Related papers: Infrared phonon activity in pristine graphite
Since the first realization of reversible charge doping in graphene via field-effect devices, it has become evident how the induction a gap could further enhance its potential for technological applications. Here we show that the gap…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…
We have studied electronic conductivity and shot noise of bilayer graphene (BLG) sheets at high bias voltages and low bath temperature $T_0=4.2$ K. As a function of bias, we find initially an increase of the differential conductivity, which…
We report an infrared spectroscopy study of the antiferromagnetic (AFM) insulator EuZn$_2$As$_2$ over a broad frequency range, spanning temperatures both above and below the AFM transition $T_{\rm N} \simeq$ 20 K. The optical response…
A theory is presented for the strong enhancement of graphene-on-substrate bandgaps by attractive interactions mediated through phonons in a polarizable superstrate. It is demonstrated that gaps of up to 1eV can be formed for experimentally…
We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with…
We show that external control of Fano resonances in general leads to complex Fano $q$-parameters. Fano line shapes of photo-electron and transient absorption spectra in presence of an infrared control field are investigated. Computed…
Recent advances in strain engineering at the nanoscale have shown the feasibility to modulate the properties of graphene. Although the electron-phonon (e-ph) coupling and Kohn anomalies in graphene define the phonon branches contributing to…
Taking into account the constraints imposed by the lattice symmetry, the phonon dispersion is calculated for graphene with interactions between the first and second nearest neighbors in the framework of the Born-von Karman model. Analytical…
We have investigated electrical transport and shot noise in graphene field effect devices. In large width over length ratio $W/L$ graphene strips, we have measured shot noise at low frequency ($f$ = 600--850 MHz) in the temperature range of…
Allotropes of carbon, such as diamond and graphene, are among the best conductors of heat. We monitored the evolution of thermal conductivity in thin graphite as a function of temperature and thickness and found an intimate link between…
We calculate the effect of the electron-phonon interaction on the electronic density of states (DOS), the quasiparticle properties and on the optical conductivity of graphene. In metals with DOS constant on the scale of phonon energies, the…
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center…
We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW…
The thermal properties of anisotropic crystals are of both fundamental and practical interest, but transport phenomena in anisotropic materials such as graphite remain poorly understood because solutions of the Boltzmann equation often…
The effect of asymmetric functionally graded material on the edge resonance and the Fano resonance in semi-infinite FGM plates are reported in this work. The edge resonance is weakened by the material perturbation and the complete mode…
Phonon polaritons in natural anisotropic crystals hold great promise for infrared nano-optics. However, the direct electrical control of these polaritons is difficult, preventing the development of active polaritonic devices. Here we…
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances…
We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find…
The detailed optical properties of BaFe2As2 have been determined over a wide frequency range above and below the structural and magnetic transition at T_N = 138 K. A prominent in-plane infrared-active mode is observed at 253 cm^{-1} (31.4…