Related papers: Transistor as a Rectifier
The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in the channel shows that the electron tunnels through a region…
A quantum thermal transistor is designed by the strong coupling between one qubit and one qutrit which are in contact with three heat baths with different temperatures. The thermal behavior is analyzed based on the master equation by both…
Molecular electronics originally proposed that small molecules sandwiched between electrodes would accomplish electronic functions and enable to reach ultimate scaling. However, so far, functional molecular devices have been only…
Asymmetric current--voltage ($I(V)$) curves, known as the diode or rectification effect, in one--dimensional electronic conductors can have their origin from scattering off a single asymmetric impurity in the system. We investigate this…
The development of the sixth generation of wireless communications technology (6G) requires terminals that can operate at frequencies above 100 GHz. For human-centric applications, these terminals should also be flexible and have low power.…
Molecular-scale diodes made from self-assembled monolayers (SAMs) could complement silicon-based technologies with smaller, cheaper, and more versatile devices. However, advancement of this emerging technology is limited by insufficient…
Quantum thermal devices which can manage heat as their electronic analogues for the electronic currents have attracted increasing attention. Here a three-terminal quantum thermal device is designed by three coupling qubits interacting with…
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an…
This paper describes a pipelined analog-to-digital converter (ADC) employing a power and area efficient architecture. The adjacent stages of a pipeline share operational amplifiers. In order to keep accuracy of the amplifiers in the first…
By coupling two nonlinear one dimensional lattices, we demonstrate a thermal diode model that works in a wide range of system parameters. We provide numerical and analytical evidence for the underlying mechanism which allows heat flux in…
Josephson diodes are superconducting elements that show an asymmetry in the critical current depending on the direction of the current. Here, we theoretically explore how an alternating current bias can tune the response of such a diode. We…
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…
Sequential tunneling model is used to study electron transport in molecular rectifiers based on structures of donor-bridge-acceptor type. The device is made of two metallic electrodes connected by a molecule, which contains acceptor and…
A field-effect transistor (FET) amplifier for small voltage signals is presented. Its design is elementary and the construction can be afforded by anyone. Despite its simplicity, with a voltage noise less than 1 nV/sqrt(Hz), it outperforms…
Spin-diodes are usually resonant in nature (GHz frequency) and tuneable by magnetic field and bias current with performances, in terms of sensitivity and minimum detectable power, overcoming the semiconductor counterpart, i.e. Schottky…
The latest generation of transistors are nanoscale devices whose performance and reliability are limited by thermal noise in low-power applications. Therefore developing efficient methods to compute the voltage and current fluctuations in…
Self-heating in surrounding gate transistors can degrade its on-current performance and reduce lifetime. If a transistor heats/cools with time-constants less than the inverse of the operating frequency, a predictable, frequency-independent…
This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping and thickness on the voltage penalty of the transistor-LED…
We present theoretical estimates for a high-speed, low-loss, all-optical transistor using a micro-resonator device, whose fields interact evanescently with Rubidium vapor. We use a four-level electromagnetically induced absorption scheme to…
A decision feedback circuit with integrated offset compensation is presented in this paper. The circuit is built around the sense amplifier comparator. The feedback loop is closed around the first stage of the comparator resulting in…