Related papers: Transistor as a Rectifier
On-silicon inductors using a bulk 0.18 {\mu}m CMOS process have been designed. By shunting different metal layers in parallel, inductor values and quality factors were simulated. Selected inductors were then employed in two open-loop buck…
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…
We demonstrate a controllable electromagnetic wave reflector/absorber for different polarizations with metamaterial involving electromagnetic resonant structures coupled with diodes. Through biasing at different voltages to turn ON and OFF…
The idea that one can build a solid-state device that lets heat flow more easily in one way than in the other, forming a heat valve, is counter-intuitive. However the design of a thermal rectifier can be easily understood from the basic…
The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel…
Recently, the possibility to tune the critical current of conventional metallic superconductors via electrostatic gating was shown in wires, Josephson weak-links and superconductor-normal metal-superconductor junctions. Here we exploit such…
Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic…
The peculiarities of electric current are studied occurring in semiconductors with strongly nonuniform distribution of charge carriers. The formation of such nonuniformities and the regulation of carrier mobilities can be realized by means…
Rectification properties of semiconductor p-n junction diodes are the basic and important characteristics for electronic device evaluation, especially for novel semiconductor materials. Today's semiconductor devices' fabrication and…
As a superconductor goes from the normal state into the superconducting state, the voltage vs. current characteristics at low currents change from linear to non-linear. We show theoretically and experimentally that the addition of current…
The main promise of tunnel FETs (TFETs) is to enable supply voltage ($V_{DD}$) scaling in conjunction with dimension scaling of transistors to reduce power consumption. However, reducing $V_{DD}$ and channel length ($L_{ch}$) typically…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
Flexible fully transparent diodes with high rectification ratio of 5 e 8 are fabricated with all oxide materials at low temperature. The devices are optically transparent in visible spectra range and electrically robust while mechanically…
Thermal rectification phenomenon is a manifestation of an asymmetry in the heat flux when the temperature difference between two interacting thermal reservoirs is reversed. In this letter, we present a far-field radiative thermal rectifier…
The paper presents a current tunable multifunction filter using current conveyor. The proposed circuit can be realized as on chip tunable low pass, high pass, band pass and elliptical notch filter. The circuit employs two current conveyors,…
A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their…
Resonant rectifier topologies would be a promising candidate for achieving simple, compact, and reliable single-stage wireless power transfer (WPT) receiver if not for the lack of good DC regulation capability. This paper investigates the…
A demonstration that e=2.718 rounded to 3 is the best radix for computation is disproved. The MOSFET-like CNTFET technology is used to compare inverters, Nand, adders, multipliers, D Flip-Flops and SRAM cells. The transistor count ratio…
In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…
A physical system connected to two thermal reservoirs at different temperatures is said to act as a heat rectifier when it is able to bias the heat current in a given direction, similarly to an electronic diode. We propose to quantify the…