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Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the…
Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes,…
For a class of 2D hybrid organic-inorganic perovskite semiconductors based on $\pi$-conjugated organic cations, we predict quantitatively how varying the organic and inorganic component allows control over the nature, energy and…
Two-dimensional electron gases (2DEGs) formed at complex oxide interfaces offer a unique platform to engineer quantum nanostructures. However, scalable fabrication of locally addressable devices in these materials remains challenging. Here,…
Hybrid ionic-electronic conductors have the potential to generate memory effects and neuronal behavior. The functionality of these mixed materials depends on ion motion through thin polarizable channels. Here, we explore different…
In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back gate of an asymmetrical double gate (DG) Silicon-On-Insulator (SOI)…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in…
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…
We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a…
Superconducting diodes are a recently-discovered quantum analogueue of classical diodes. The superconducting diode effect relies on the breaking of both time-reversal and inversion symmetry. As a result, the critical current of a…
Electronic properties of low dimensional superconductors are determined by many-body-effects. This physics has been studied traditionally with superconducting thin films, and in recent times with two-dimensional electron gases (2DEGs) at…
Integration of 2D semiconductors with photonic crystal slabs provides an attractive approach to achieve strong light--matter coupling and exciton-polariton formation in a planar chip-compatible geometry. However, for the development of…
We investigate ballistic spin transport in a two dimensional electron gas system through magnetic barriers of various geometries using the transfer matrix method. While most of the previous studies have focused on the effect of magnetic…
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in…
We study one-dimensional transport in focused-ion-beam written in-plane-gate transistors on III-V heterostructures at moderately low temperatures at zero bias without any external magnetic field applied. In accordance with a recent proposal…
Atomically thin semiconductors exhibit tunable exciton resonances that can be harnessed for dynamic manipulation of visible light in ultra-compact metadevices. However, the rapid nonradiative decay and dephasing of excitons at room…
A 2D electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional delta-doping to control the interface's composition in LaxSr1-xTiO3/SrTiO3 artificial oxide…
The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the…
Superconducting protected qubits aim to achieve sufficiently low error rates so as to allow realization of error-corrected, utility-scale quantum computers. A recent proposal encodes a protected qubit in the quasicharge degree of freedom of…