Related papers: Wetting layer evolution and its temperature depend…
The diffusional growth of wetting droplets on the boundary wall of a semi-infinite system is considered in different regions of a first-order wetting phase diagram. In a quasistationary approximation of the concentration field, a general…
Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence in combination with photomodulated reflectance spectroscopy were…
The wetting of the homogeneously strained wetting layer by dislocation-free three-dimensional islands belonging to an array has been studied. The array has been simulated as a chain of islands in 1+1 dimensions. It is found that the wetting…
Inhomogeneous ensembles of quantum dots (QDs) coupled to a charge reservoir are widely studied by using, e.g., electrical methods like capacitance-voltage spectroscopy. We present experimental measurements of the QD capacitance as a…
The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room…
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light…
The evolution of InAs quantum dots grown on InP substrates by metal-organic vapour phase epitaxy is studied as a function of InAs coverage. Under specific growth conditions, the onset of the two- to three-dimensional transition is seen to…
The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxation was accompanied by changes in the surface structure of the…
We investigate wetting phenomena between self-bound quantum fluids in a three-component Bose mixture of $^{23}$Na, $^{39}$K, and $^{41}$K atoms. Within a density-functional approach including mean-field interactions and Lee-Huang-Yang…
Recent experimental results: (i) the measurement of the $T \ln T$ specific heat in cuprates and the earlier such results in some heavy fermion compounds, (ii) the measurement of the single-particle scattering rates, (iii) the density…
We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching…
Building up a solid-state material from quantum dots (QD), which are often referred to as artificial atoms, offers the potential to create new materials with unprecedented macroscopic properties. The investigation of the electronic…
In this paper we develop and significantly extend the thermal phase change model, introduced in [12], describing the process of paraffinic wax layer formation on the interior wall of a circular pipe transporting heated oil, when subject to…
Tailoring electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how a fine control of…
When a solid plate is withdrawn from a partially wetting liquid, a liquid layer dewets the moving substrate. High-speed imaging reveals alternating thin and thick regions in the entrained layer in the transverse direction at steady state.…
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However,…
In this two-part study we investigate the phase behaviour of a fluid spatially confined in a semi-infinite rectangular pore formed by three orthogonal walls and connected to a reservoir maintaining constant values of pressure and…
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs)…
The local atomic structure and lattice dynamics of two isostructural layered transition metal dichalcogenides (TMDs), 1T-TiSe$_2$ and 1T-VSe$_2$, were studied using temperature-dependent X-ray absorption spectroscopy at the Ti, V, and Se…
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks.…