Related papers: Free Running Single Photon Detection based on a ne…
We present recent results on our development of single photon detectors, including: gated and free-running InGaAs/InP avalanche photodiodes; hybrid detection systems based on sum-frequency generation and Si APDs; and SSPDs (superconducting…
This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection…
Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III-V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for…
Gated InGaAs/InP avalanche photodiodes are the most practical device for detection of telecom single photons arriving at regular intervals.Here, we report the development of a compact single-photon detector (SPD) module measured just 8.8cm…
We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing…
We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45\pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and…
We have performed a statistical characterization of the effect of afterpulsing in a free-running silicon single-photon detector by measuring the distribution of afterpulse waiting times in response to pulsed illumination and fitting it by a…
Single-photon detectors based on avalanche photodiodes (SPAD) are key elements of many modern highly sensitive optical systems. One of the bottlenecks of such detectors is a afterpulsing effect which limits a detection rate and requires an…
We propose a characterization method for the overall detection efficiency, afterpulse and dark count probabilities of single-photon counting modules in real-time with simple instrumentation. This method can be applied when the module is…
Single-photon avalanche photodiode(SPAD) has been widely used in researching of quantum optics. Afterpulsing effect, which is an intrinsic character of SPAD, affects the system performance in most of the experiments and needs to be…
Ultraviolet single-photon detector (UVSPD) provides a key tool for the applications requiring ultraweak light detection in the wavelength band. Here, we report a 4H-SiC single-photon avalanche diode (SPAD) based free-running UVSPD with…
We report on the observation of a non-uniform dark count rate in Superconducting Nanowire Single Photon Detectors (SNSPDs), specifically focusing on an afterpulsing effect present when the SNSPD is operated at a high bias current regime.…
We report operation and characterization of a lab-assembled single-photon detector based on commercial silicon avalanche photodiodes (PerkinElmer C30902SH, C30921SH). Dark count rate as low as 5 Hz was achieved by cooling the photodiodes…
Single-photon detectors (SPDs) are widely used in applications requiring extremely weak light detection. In the near-infrared region, SPDs based on InGaAs/InP single-photon avalanche diodes (SPADs) are the primary candidates for practical…
Single photon detectors have dark count rates that depend strongly on the bias level for detector operation. In the case of weak light sources such as novel lasers or single-photon emitters, the rate of counts due to the light source can be…
PIXELATED geiger-mode avalanche photodiodes(PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic…
For the SPECTRAP experiment at GSI, Germany, detectors with Single-Photon counting capability in the visible and near-infrared regime are required. For the wavelength region up to 1100 nm we investigate the performance of 2x2 mm^2 avalanche…
InGaAs single-photon avalanche photodiodes (APDs) are key enablers for high-bit rate quantum key distribution. However, the deviation of such detectors from ideal models can open side-channels for an eavesdropper, Eve, to exploit. The…
We build and test a single-photon detector based on a Si avalanche photodiode Excelitas 30902SH thermoelectrically cooled to -100 deg. C. Our detector has dark count rate below 1 Hz, 500 um diameter photosensitive area, photon detection…
We have performed a detailed study of the dependence of afterpulse probability in InGaAs/InP sine-gated SPAD on the dead time and the existing approach for its implementation. We demonstrated an electrical scheme combining sinusoidal gating…