Related papers: Laser written junctionless dual in-plane-gate thin…
Superconducting junctions are widely used in multitude of applications ranging from quantum information science and sensing to solid-state cooling. Traditionally, such devices must be fabricated on flat substrates using standard…
Direct laser writing method is a promising technique for the large-scale and cost-effective fabrication of periodic nanostructure arrays exciting hybrid lattice plasmons. This type of electromagnetic mode manifests a narrow and deep…
The commercialization of transistors capable of both switching and amplification in 1960 resulted in the development of second-generation computers, which resulted in the miniaturization and lightening while accelerating the reduction and…
Multifocal laser direct writing (LDW) based on phase-only spatial light modulator (SLM) can realize flexible and parallel nanofabrication with high throughput potential. In this investigation, a novel approach of combining two-photon…
We demonstrate high performance chemical bath deposited CdS thin-film transistors TFTs using atomic layer deposited ZrO2 based high-k gate dielectric material.
We report photonic quantum circuits created using an ultrafast laser processing technique that is rapid, requires no lithographic mask and can be used to create three-dimensional networks of waveguide devices. We have characterized…
We report the ultrafast laser fabrication and mid-IR characterization (3.39 microns) of four-port evanescent field directional couplers. The couplers were fabricated in a commercial gallium lanthanum sulphide glass substrate using…
Amorphous oxide semiconductors, especially indium oxide-based (InOx) thin-films, have been major candidates for high mobility with easy-to-use device processability. As one of the dopants in InOx semiconductors, we proposed Si to design a…
Solution-processed organic semiconductors enable the fabrication of large-area and flexible electronics by means of cost-effective, solution-based mass manufacturing techniques. However, for many applications an insoluble active layer can…
We consider theoretical models of the nanolaser and logic gates on carbon nanotubes (CNTs). In our work, it is shown at pumping the nanoresonator of the nanolaser on CNT by optical radiation using a quantum dot as nano light emitted diode…
Super capacitors are promising energy storage devices due to their capability of delivering high peak current and storing high amount of energy in a short time with very low internal power loss. We fabricated the graphene or graphite oxide…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
Thin-film transistors composed of a hydrogen-containing indium oxide active layer are promising candidates for backplane devices in next-generation flat panel displays, offering higher definition and faster operation. However, the hydrogen…
The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…
In this paper, we demonstrate the ultra-high-power handling capability and DC bias stability of optical microring and electro-optic (EO) coupling resonators on the thin-film lithium tantalate (TFLT) platform. We show that, with annealing,…
The gap between cell and module efficiency is a major challenge for all photovoltaic (PV) technologies. For monolithic thin film PV modules, a significant fraction of this gap has been attributed to parasitic shunts, and other defects,…
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the…
We present the theoretical basis for a new photoemission regime, transient work function gating (TWFG), that temporally and energetically gates photoemission and produces near-threshold photoelectrons with thermally limited emittance,…