Related papers: Spin-current rectification through a quantum dot u…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
We show that electrons recolliding with the ionic core upon tunnel ionization of noble gas atoms driven by a strong circularly polarized laser field in combination with a counter-rotating second harmonic are spin polarized and that their…
We discuss the possibility to generate, manipulate, and probe single spins in single-level quantum dots coupled to ferromagnetic leads. The spin-polarized currents flowing between dot and leads lead to a non-equilibrium spin accumulation,…
We present a theoretical analysis of the nonlinear bias and temperature dependence of current-voltage characteristics of a spin-valve device which is formed by connecting a quantum dot to two ferromagnetic electrodes whose magnetic moments…
In this paper, current-induced spin polarization for two-dimensional electron gas with a general spin-orbit interaction is investigated. For isotropic energy spectrum, the in-plane current-induced spin polarization is found to be dependent…
The temperature dependence of magneto current in the spin spin valve transistor system is theoretically explored based on phenomenological model. We find that the collector current strongly depends on the relative orientation of magnetic…
The spin injection and accumulation in metallic lateral spin valves with transparent interfaces is studied using d.c. injection current. Unlike a.c.-based techniques, this allows investigating the effects of the direction and magnitude of…
We have investigated the spin current polarization without the external magnetic field in the resonant tunneling diode with the emitter and quantum well layers made from the ferromagnetic GaMnN. For this purpose we have applied the…
Using the Keldysh formalism the tunneling current through a hybrid structure where a confined magnetic insulator (I) is sandwiched between two non-magnetic leads is calculated. The leads can be either normal metals (M) or superconductors…
The recently observed Seebeck spin tunneling, the thermoelectric analog of spin-polarized tunneling, is described. The fundamental origin is the spin dependence of the Seebeck coefficient of a tunnel junction with at least one ferromagnetic…
We introduce a distinctive feature of spin-polarized transport, the Spin Coulomb Drag: there is an intrinsic source of friction for spin currents due to the Coulomb interaction between spin ``up'' and spin ``down'' electrons. We calculate…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
Spin-polarized electrical transport is investigated in $ Al_{2}O_{3}/Ni_{80}Fe_{20}/Al_{2}O_{3}$ thin films for permalloy thickness between 6 and 20nm. The degree of spin-polarization of the current flowing in the plane of the film is…
An electric current from a ferromagnet into a non-magnetic material can induce a spin-dependent electron temperature. Here it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible…
We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of…
We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relatively low temperatures. We show that spin polarization of…
We demonstrate theoretically that the spin polarization of current can be electrically amplified within nonmagnetic semiconductors by exploiting the fact the spin current, compared to the charge current, is weakly perturbed by electric…
Te is a naturally p-doped semiconductor with a chiral structure, where an electrical current causes the conduction electrons to become spin polarized parallel to the transport direction. In this paper, we present a comprehensive theoretical…
In disordered systems, the hopping conductivity regime is usually realized at low temperatures where spin-related phenomena differ strongly from the case of delocalized carriers. We develop the unified microscopic theory of current induced…
We investigate coherent transport through open lateral quantum dots using recursive Green's function technique, incorporating exchange-correlation effects within local spin-density approximation (LSDA). At low electron densities the current…