Related papers: Unipolar transport in bilayer graphene controlled …
We investigate gated trilayer graphene partially devoid of outer layers and forming a system of two trilayers connected by a single layer of graphene. A difference in the stacking order of trilayers leads to the appearance of gapless…
We investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system. We find that a ballistic NGN junction can display insulating…
Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these…
Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing…
We investigate the transport properties of a junction consisting of an electron-hole bilayer in contact with normal and superconducting leads. The electron-hole bilayer is considered as a semi-metal with two electronic bands. We assume that…
Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of…
We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples…
We address the optical conductivity of undoped bilayer graphene in the presence of a finite bias voltage at finite temperature. The effects of gap parameter and stacking type on optical conductivity are discussed in the context of tight…
Controlling the properties of materials by driving them out of equilibrium is an exciting prospect that has only recently begun to be explored. In this paper we give a striking theoretical example of such materials design: a tunable gap in…
We develop a theory of fluctuation-driven phenomena in thermal transport in graphene double-layers. We work in the regime of electron hydrodynamics and focus on the double charge neutrality point. Although at the neutrality point charge…
Bilayer graphene twisted by a small angle shows a significant charge modulation away from neutrality, as the charge in the narrow bands near the Dirac point is mostly localized in the regions of the Moir\'e pattern with $AA$ stacking. The…
It is observed experimentally that the sign of the Hall resistance can be flipped by a dc electric current in the twisted bilayer graphene (TBG) at 3/4 filling of the four-fold degenerate conduction flat bands. The experiment implies a…
By taking into account the full four band energy spectrum, we calculate the transmission probability and conductance of electrons across symmetric and asymmetric double potential barrier with a confined interlayer potential difference in…
We investigate transport in locally-gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge. Tuning densities into the p-n regime significantly reduces resistance along the p-n interface,…
We investigate the electronic properties of a hybrid system that comprises single-bilayer graphene structures subjected to a perpendicular magnetic field. Specifically, our focus is on the behavior exhibited by the zigzag boundaries of the…
We study conductance across a twisted bilayer graphene coupled to single-layer graphene leads in two setups: a flake of graphene on top of an infinite graphene ribbon and two overlapping semi-infinite graphene ribbons. We find conductance…
When a bilayer of graphene is placed in a suitably configured field effect device, an asymmetry gap can be generated and the carrier concentration made different in each layer. This provides a tunable semiconducting gap, and the valence and…
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the…
We study the superconducting transport phenomena, involving lensing effect and supercurrent in AA-stacked bilayer graphene, which is characterized by a linear gapless band with two shifted Dirac cones. Our findings indicate that cross…
A strong in-plane magnetic field drastically alters the low-energy spectrum of bilayer graphene by separating the parabolic energy dispersion into two linear Dirac cones. The effect of this dramatic change on the transport properties…