We investigate transport in locally-gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge. Tuning densities into the p-n regime significantly reduces resistance along the p-n interface, while resistance across the interface increases. This provides an experimental signature of snake states, which zig-zag along the p-n interface and remain stable as applied perpendicular magnetic field approaches zero. Snake states appear as a peak in transverse resistance measured along the p-n interface. The generic role of snake states disordered graphene is also discussed.
Cite
@article{arxiv.1012.0959,
title = {Snake States in Graphene p-n Junctions},
author = {J. R. Williams and C. M. Marcus},
journal= {arXiv preprint arXiv:1012.0959},
year = {2011}
}
Comments
supplemental material available at http://marcuslab.harvard.edu/papers/Williams_SnakesSupp.pdf