Related papers: Polarization Response in InAs Quantum Dots: Theore…

I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dots single particle and many body properties as a function of quantum dot-surrounding matrix valence band offset. I use an atomistic, empirical tight-binding…

We provide a self-contained review of master equation approaches to modelling phonon effects in optically driven self-assembled quantum dots. Coupling of the (quasi) two-level excitonic system to phonons leads to dissipation and dephasing,…

In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally…

In view of the precise data available on inclusive polarized electron scattering off polarized proton targets in the nucleon resonance excitation region, we compare these results with the coherent sum of resonant contributions to the…

In this work, we investigate the electronic and optical properties of the b-AsP quantum dots(QDs) and quantum rings(QRs) with different edge types in the presence of an in-plane electric field and a perpendicular magnetic field utilizing…

The electronic properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We calculate the surface electronic band structure which is studied as a…

We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular…

We present a study of the polarization properties of emission lines from single InGaN/GaN quantum dots (QDs). The QDs, formed by spinodal decomposition within ultra-thin InGaN quantum wells, are investigated using single-QD…

Photonic-based qubits and integrated photonic circuits have enabled demonstrations of quantum information processing (QIP) that promises to transform the way in which we compute and communicate. To that end, sources of…

Semiconductor nano-crystals, known as quantum dots (QDs), have attracted significant attention for their unique fluorescence properties. Under continuous excitation, QDs emit photons with intricate intensity fluctuation: the intensity of…

Resonant photoluminescence excitation (RPLE) spectra of a neutral InGaAs quantum dot show an unconventional line-shape that depends on the detection polarization. We characterize this phenomenon by performing polarization-dependent RPLE…

Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers…

We experimentally verify hitherto untested theoretical predictions about the thermoelectric properties of Kondo correlated quantum dots (QDs). The specific conditions required for this study are obtained by using QDs epitaxially grown in…

In the last years, Infrared Reflection-Absorption Spectroscopy (IRRAS) became a standard technique to study vibrational excitations of molecules. These investigations are strongly motivated by perspective applications in monitoring chemical…

Using polarization measurements in remote sensing and optical studies allows retrieving more information. We consider relationship between the reflection coefficients of plane and rough surfaces for linearly polarized waves. Certain…

We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution…

We theoretically investigate polarization-entangled photon generation by using a semiconductor quantum dot embedded in a microcavity. The entangled states can be produced by the application of two cross-circularly polarized laser fields.…

We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes…

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…

Kondo correlation in a spin polarized quantum dot (QD) results from the dynamical formation of a spin singlet between the dot's net spin and a Kondo cloud of electrons in the leads, leading to enhanced coherent transport through the QD. We…