Related papers: Spin gating electrical current
Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier.…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into…
A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…
We review different electron transport methods to probe the magnetic properties, such as the magnetic anisotropy, of an individual Fe4 SMM. The different approaches comprise first and higher order transport through the molecule. Gate…
Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
The spin chemical potential characterizes the tendency of spins to diffuse. Probing the spin chemical potential could provide insight into materials such as magnetic insulators and spin liquids and aid optimization of spintronic devices.…
We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or…
Hysteretic switching in the magnetoresistance of short-channel, ferromagnetically contacted individual single wall carbon nanotubes is observed, providing strong evidence for nanotube spin transport. By varying the voltage on a capacitively…
Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…
Inefficient screening of electric fields in nanoconductors makes electric manipulation of electronic transport in nanodevices possible. Accordingly, electrostatic (charge) gating is routinely used to affect and control the Coulomb…
We theoretically investigate spin dependent transport in ferromagnetic/normal metal/ferromagnetic single electron transistors by applying master equation calculations using a two dimensional space of states involving spin and charge degrees…
Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical…
We develop a non-equilibrium Green's function formalism to study magnonic spin transport through a strongly anisotropic ferromagnetic insulator contacted by metallic leads. We model the ferromagnetic insulator as a finite-sized…
We examine the possibility of using graphene nanoribbons (GNRs) with directly substituted chromium atoms as spintronic device. Using density functional theory, we simulate a voltage bias across a constructed GNR in a device setup, where a…
We study the effects of electrostatic gating on the current-induced phenomena in ultrathin ferromagnet/heavy metal heterostructures. We utilize heterodyne detection and analysis of symmetry with respect to the direction of the magnetic…
Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the N\'eel vector direction of AFs.…