Related papers: Classification of step bunching phenomena
We study the effect of two-dimensionality on step bunching induced by drift of adatoms. When anisotropy of the diffusion coefficient changes alternately on consecutive terraces like a Si(001) vicinal face, bunching occurs with the drift of…
We studied the step dynamics during sublimation and growth in the presence of electromigration force acting on the adatoms. In the limit of fast surface diffusion and slow kinetics of atom attachment-detachment at the steps we formulate a…
Stepped GaN(0001) surface is studied by the kinetic Monte Carlo method and compared with the model based on Burton-Carbera-Frank equations. Successive stages of surface pattern evolution during high temperature sublimation process are…
Electromigration-induced step bunching in the presence of sublimation or deposition is studied theoretically in the attachment-limited regime. We predict a phase transition as a function of the relative strength of kinetic asymmetry and…
We study the evolution of step bunches on vicinal surfaces using a thermodynamically consistent step-flow model that (i) circumvents the quasistatic approximation that prevails in the literature by accounting for the dynamics of adatom…
The steps at the crystal surfaces could be transparent for the migrating adatoms. In the case of significant transparency the velocity of a given step in a given moment is affected by detachment of atoms from rather distant steps in rather…
We study vicinal crystal surfaces within the terrace-step-kink model on a discrete lattice. Including both a short-ranged attractive interaction and a long-ranged repulsive interaction arising from elastic forces, we discover a series of…
We use a one-dimensional step model to study quantitatively the growth of step bunches on Si(111) surfaces induced by a direct heating current. Parameters in the model are fixed from experimental measurements near 900 deg C under the…
In order to study the unstable step motion on vicinal crystal surfaces we devise vicinal Cellular Automata. Each cell from the colony has value equal to its height in the vicinal, initially the steps are regularly distributed. Another array…
The coexistence of step bunching and step meandering remains contradictory in the understanding of the unstable step-flow growth. Considered separately, the two instabilities have generated rich but largely independent modeling traditions.…
We studied the step dynamics during crystal sublimation and growth in the limit of fast surface diffusion and slow kinetics of atom attachment-detachment at the steps. For this limit we formulate a model free of the quasi-static…
By carrying out Monte Carlo simulations,we study step bunching during solution growth. For simplicity, we consider a square lattice, which represents a diffusion field in a solution, and express the diffusion of atoms as the hopping of…
We report new results on the non-conserved dynamics of parallel steps on vicinal surfaces in the case of sublimation with electromigration and step-step interactions. The derived equations are valid in the quasistatic approximation and in…
The morphology of a growing crystal surface is studied in the case of an unstable two-dimensional step flow. Competition between bunching and meandering of steps leads to a variety of patterns characterized by their respective instability…
We propose a one-dimensional model based on the Burton-Cabrera-Frank equations to describe the electromigration-induced step bunching instability on vicinal surfaces. The step drift resulting from atomic evaporation and/or deposition is…
Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the propagation of atomic steps, a process called step-flow growth. In some instances, the steps tend to form close groups (or bunches), a…
We consider a simple model for the growth of isolated steps on a vicinal crystal surface. It incorporates diffusion and drift of adatoms on the terrace, and strong step and kink edge barriers. Using a combination of analytic methods and…
Codeposition of impurities during the growth of a vicinal surface leads to an impurity concentration gradient on the terraces, which induces corresponding gradients in the mobility and the chemical potential of the adatoms. Here it is shown…
Bunching and meandering instability of steps at the 4H-SiC(0001) surface is studied by the kinetic Monte Carlo simulation method. Change in the character of step instability is analyzed for different rates of particle jumps towards step. In…
On a Si(111) vicinal face near the structural transition temperature, the $1 \times 1$ structure and the $7 \times 7$ structure coexist in a terrace: the $1 \times 1$ structure is in the lower side of the step edge and the $7 \times 7$…