Related papers: Classification of step bunching phenomena
We study the step bunching process in three different 1D step flow models and obtain scaling relations for the step bunches formed in the long times limit. The first one was introduced by S.Stoyanov [Jap. J.Appl. Phys. 29, (1990) L659] as…
We formulate a new (1+1)D step model of potentially unstable vicinal growth that we call "C+ - C-" model and study the step bunching process in it. The basic assumption is that the equilibrium adatom concentrations on both sides of the step…
We introduce two hybrid models of step bunching on vicinal crystal surfaces. The model equations for step velocity are constructed by the two possible exchanges of terms between the equations of two primary models MM2 and LW2…
We report numerical results for two models of vicinal motion. The first, LW, aims at crystal evaporation when the detachment from steps is slow [Liu and Weeks, PRB 57, 23 (1998) 14891]. The source of destabilization is electromigration…
Concerted experimental and numerical studies of step bunching on vicinal crystal surfaces resulting from step-down electromigration of partially charged adatoms, confirmed the theoretical prediction of scaling dependence of the minimal…
We review the studies on the scaling of the minimal step-step distance lmin in the bunch with the bunch size N, l_min~N^(-{\gamma}). We build our retrospective around the different values of the exponent {\gamma} obtained from models and…
We study step bunching under conditions of attachment/detachment limited kinetics in the presence of a deposition or sublimation flux, which leads to bunch motion. Analysis of the discrete step dynamics reveals that the bunch velocity is…
This work provides a ground for a quantitative interpretation of experiments on step bunching during sublimation of crystals with a pronounced Ehrlich-Schwoebel (ES) barrier in the regime of weak desorption. A strong step bunching…
We report for the first time the observation of bunching of monoatomic steps on vicinal W(110) surfaces induced by step up or step down currents across the steps. Measurements reveal that the size scaling exponent {\gamma}, connecting the…
The step bunching instability is studied in three models of step motion defined in terms of ordinary differential equations (ODE). The source of instability in these models is step-step attraction, it is opposed by step-step repulsion and…
We devise a new 1D atomistic scale model of vicinal growth based on Cellular Automaton. In it the step motion is realized by executing the automaton rule prescribing how adatoms incorporate into the vicinal crystal. Time increases after…
By taking account of the alternation of structural parameters, we study bunching of impermeable steps induced by drift of adatoms on a vicinal face of Si(001). With the alternation of diffusion coefficient, the step bunching occurs…
We study further the recently introduced [Ranguelov et al., Comptes Rendus de l'Acad. Bulg. des Sci. 60, 4 (2007) 389] "C+-C-" model of step flow crystal growth over wide range of model parameters. The basic assumption of the model is that…
Bunching of steps at the surface of growing crystals can be induced by both directions of the driving force: step up and step down. The processes happen in different adatom concentrations and differ in character. In this study we show how…
A sublimating vicinal crystal surface can undergo a step bunching instability when the attachment-detachment kinetics is asymmetric, in the sense of a normal Ehrlich-Schwoebel effect. Here we investigate this instability in a model that…
We use kinetic Monte Carlo simulations to understand growth- and etching-induced step bunching of 6H-SiC{0001} vicinal surfaces oriented towards [1-100] and [11-20]. By taking account of the different rates of surface diffusion on three…
We study a minimal stochastic model of step bunching during growth on a one-dimensional vicinal surface. The formation of bunches is controlled by the preferential attachment of atoms to descending steps (inverse Ehrlich-Schwoebel effect)…
We approach the old-standing problem of vicinal crystal surfaces destabilized by step-down and step step-up currents from a unified modelling viewpoint with focus on both the initial and the intermediate stages of the instability. We…
We study current-induced step bunching and wandering instabilities with subsequent pattern formations on vicinal surfaces. A novel two-region diffusion model is developed, where we assume that there are different diffusion rates on terraces…
We model an apparent instability seen in recent experiments on current induced step bunching on Si(111) surfaces using a generalized 2D BCF model, where adatoms have a diffusion bias parallel to the step edges and there is an attachment…