Related papers: Electronic structure and enhanced visible light ab…
The electronic structure of nanolaminate Ti2AlN and TiN thin films has been investigated by bulk-sensitive soft x-ray emission spectroscopy. The measured Ti L, N K, Al L1 and Al L2,3 emission spectra are compared with calculated spectra…
Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved and core-level photoemission. Fe, Nb and Ag were evaporated onto Bi1.5Sb0.5Te1.7Se1.3 (BSTS)…
The band structure, optical and defects properties of Ba_{2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or trans- parent conducting material. Ba_{2}TeO…
We report an optical spectroscopy study on the single crystal of Na$_2$Ti$_2$As$_2$O, a sister compound of superconductor BaTi$_2$Sb$_2$O. The study reveals unexpectedly two density wave phase transitions. The first transition at 320 K…
Co$_{1/3}$NbS$_2$ is the magnetic intercalate of 2H-NbS$_2$ where electronic itinerant and magnetic properties strongly influence each other throughout the phase diagram. Here we report the first angle-resolved photoelectron spectroscopy…
We present a computational study of the electronic properties of amorphous SiO2. The ionic configurations used are the ones generated by an earlier molecular dynamics simulations in which the system was cooled with different cooling rates…
The parity-allowed two-photon transitions between the ground state 3A2(T2) of the configuration 3d8 in cubical symmetry and the excited states of the same configuration are obtained via a simple model. This model is developed in a symmetry…
We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A…
The local-density approximation combined with the dynamical mean-field theory (LDA+DMFT) is applied to the paramagnetic phase of light actinide dioxides: UO2, NpO2, and PuO2. The calculated band gaps and the valence-band electronic…
Niobium oxide diiodide (NbOI2) is an emerging material for photonics and electronics, distinguished by its exceptional second-order nonlinearity and pronounced in-plane ferroelectricity, both originating from its highly anisotropic…
Semiconductor core$-$shell nanowires based on the GaAs substrate are building blocks of many photonic, photovoltaic and electronic devices, thanks to the associated direct band-gap and the highly tunable optoelectronic properties. The…
Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy…
The optical properties of transition metal dichalcogenides have previously been modified at the nanoscale by using mechanical and electrical nanostructuring. However, a clear experimental picture relating the local electronic structure with…
Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…
Group IV and V monolayers are very crucial 2D materials for their high carrier mobilities, tunable band gaps, and optical linear dichroism. Very recently, a novel group IV-V binary compound, Sn2Bi, has been synthesized on silicon substrate,…
We performed optical spectroscopy measurement on single crystals of Na$_2$Ti$_2$Sb$_2$O, which is the parent compound for the newly discovered Ti-based superconductors. The study reveals significant spectral change across the phase…
In a theoretical study we investigate the electronic structure and the band gap of the inverse spinel ferrite NiFe2O4. The experimental optical absorption spectrum is accurately reproduced by fitting the Tran-Blaha parameter in the modified…
The n-type tensile-strained Ge can be used as high-efficient light-emitting materials. To reveal the influence of n-type doping on the electronic structure of Ge, we have computed the electronic structure of P, As and Sb doped Ge using…
Titanium dioxide (TiO2) is a wide band gap semiconducting material which is promising for photocatalysis. Here we present first-principles calculations to study the pressure dependence of structural and electronic properties of two TiO2…
We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. We compare devices…