Related papers: Quantum percolation in quantum spin Hall antidot s…
We consider the effect of contact interaction in a prototypical quantum spin Hall system of pseudo-spin-1/2 particles. A strong effective magnetic field with opposite directions for the two spin states restricts two-dimensional particle…
The band-inverted electron-hole bilayers, such as InAs/GaSb, are an interesting playground for the interplay of quantum spin Hall effect and correlation effects because of the small density of electrons and holes and the relatively small…
The Quantum Spin Hall insulator is characterized by the presence of gapless helical edge states where the spin of the charge carriers is locked to their direction of motion. In order to probe the properties of the edge modes, we propose a…
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…
Nonreciprocal dissipationless transport has long been sought for applications in superconducting technologies. Recently, it has been implemented by the so called superconducting diode effect. Such effect arises from an imbalance in critical…
Two dimensional electron systems exhibiting the fractional quantum Hall effects are characterized by a quantized Hall conductance and a dissipationless bulk. The transport in these systems occurs only at the edges where gapless excitations…
Magnetoresistance measurements have been performed on a gated two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear features of the quantum Hall effect were…
We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is…
Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures…
We review the peculiarities of transport through a quantum dot caused by the spin transition in its ground state. Such transitions can be induced by a magnetic field. Tunneling of electrons between the dot and leads mixes the states…
We show that a two-dimensional spin-orbit-coupled system in the presence of a charge/spin-density wave with a wave-vector perpendicular to an applied electric field supports bulk manifestations of the direct/inverse spin-Hall effect. We…
We study the transport mechanisms taking place in a quantum spin Hall bar with an embedded quantum dot, where electrons localize and experience Coulomb interaction U as well as spin-flip processes {\lambda}. We solve the problem with…
We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/YIG) and normal…
The physics of a junction composed of a normal metal, quantum dot and 2D topological insulator (in a quantum spin Hall state) is elucidated. It maifests a subtle combination of Kondo correlations and quantum spin Hall edge states moving on…
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…
We have investigated spin-related effects on the electronic transport in a single antidot system in the vicinity of the $\nu = 2$ quantum Hall state where two edge states with different spins of the lowest Landau level are formed around the…
We discuss the interplay between transport and dissipation in quantum Hall bilayers. We show that quantum effects are relevant in the pseudospin picture of these systems, leading either to direct tunnelling currents or to quantum…
The spin and integer quantum Hall effects are two cousins of topological phase transitions in two-dimensional electronic systems. Their close relationship makes it possible to transform spin to integer quantum Hall effect in two-dimensional…
The quantum Hall effect emerges when two-dimensional samples are subjected to strong magnetic fields at low temperatures: Topologically protected edge states cause a quantized Hall conductivity in multiples of $e^2/h$. Here we show that the…
While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the…