Related papers: Electroluminescence from Strained Ge membranes and…
A frequency-stable, broadband laser is presented for experiments on trapped ions. Since the design is based on widely available semiconductor optical amplifier technology, similar lasers can be realized for virtually any wavelength in the…
A stable reference light source based on an LED (Light Emission Diode) is presented for stabilizing the conversion gain of the opto-electronic system of a gamma- and fast-neutron radiographic and tomographic imaging device. A constant…
In the framework of the Low Emittance Gun (LEG) project, high gradient acceleration of a low emittance electron beam will be necessary. In order to achieve this acceleration a -500 kV, 250 ns FWHM, pulse will be applied in between two…
An electrically cooled Broad Energy Germanium (BEGe) detector has been characterized in the energy range E$_{\gamma}$ $\sim$ 0.122 - 7 MeV by utilizing the $\gamma$- rays emitted by a short-lived resonance state in $^{15}$O populated…
Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is…
Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser at room under…
The intensity fluctuations of laser light are derived from photon number rate equations. In the limit of short times, the photon statistics for small laser devices such as typical semiconductor laser diodes show thermal characteristics even…
The demand for single photon sources at $\lambda~=~1.54~\mu$m, which follows from the consistent development of quantum networks based on commercial optical fibers, makes Er:O$_x$ centers in Si still a viable resource thanks to the optical…
Freestanding silicon nitride membranes with thicknesses down to a few tens of nanometers find use as TEM windows or soft X-ray spectral purity filters. As the thickness of a membrane decreases, emissivity vanishes, which limits radiative…
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the…
Proportional electroluminescence (EL) is the physical effect used in two-phase dark matter detectors, to optically record in the gas phase the ionization signal produced by particle scattering in the liquid phase. In our previous works the…
Exploring the electron tunneling mechanisms in diverse materials systems constitutes a versatile strategy for tailoring the properties of optoelectronic devices. In this domain, bipolar vertical tunneling junctions composed of van der Waals…
Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this…
We investigated the electroluminescent properties of the epitaxial graphene/SiC junction. The temperature and current dependence of electroluminescence from the epitaxial graphene/SiC is measured within a temperature range of 50-300 K. The…
The effect of the thickness of ion exchange membranes has been investigated for electrodialysis (ED) and reverse electrodialysis (RED), both experimentally and through theoretical modeling. By developing a two-dimensional model based on…
Recent developments in laser-excited photoemission electron microscopy (laser-PEEM) advance the visualization of electronic nematicity and nematic domain structures in iron-based superconductors. In FeSe and…
The performance of germanium detectors for high-energy $\gamma$-rays was evaluated using a 992-keV resonance in the $^{27}$Al(p, $\gamma$)$^{27}$Si reaction. The measurement was conducted at the RIKEN tandem accelerator. The energy of the…
We describe a high-power, frequency-tunable, external cavity diode laser (ECDL) system near 626 nm useful for laser cooling of trapped $^9$Be$^+$ ions. A commercial single-mode laser diode with rated power output of 170 mW at 635 nm is…
We present new results regarding the features of high energy photon emission by an electron beam of 178 GeV penetrating a 1.5 cm thick single Si crystal aligned at the Strings-Of-Strings (SOS) orientation. This concerns a special case of…
We investigate the influence of a static electric field on the incoherent nonlinear response of an unloaded electrically-contacted nanoscale optical gap antenna. Upon excitation by a tightly focused near-infrared femtosecond laser beam, a…