Related papers: Electroluminescence from Strained Ge membranes and…
Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to…
Light emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, medical equipment, and other fields. However, their energy efficiency is still below expectations in many…
Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the…
The EDELWEISS collaboration aims for direct detection of light dark matter using germanium cryogenic detectors with low threshold phonon sensor technologies and efficient charge readout designs. We describe here the development of Ge…
In thermal plasma spectroscopy, Stark broadening measurement of hydrogen spectral lines is considered to be a good and reliable measurement for electron density. Unlike intensity based measurements, Stark broadening measurements can pose a…
Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium…
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed…
We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown…
The commercially available 4000-Watt continuous-wave Erbium-doped-fiber laser, emitting at the 1567-nanometer wavelength where the atmosphere has high transmission, provides an opportunity for harvesting electric power at remote off the…
The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to the spin-dependent optical selection rules, the radiative…
Perovskite-based optoelectronic devices have gained significant attention due to their remarkable performance and low processing cost, particularly for solar cells. However, for perovskite light-emitting diodes (LEDs), non-radiative charge…
The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were…
Because of their strong excitonic photoluminescence (PL) and electroluminescence (EL), together with an excellent electronic tunability, transition metal dichalcogenide (TMD) semiconductors are promising candidates for novel optoelectronic…
Efficient generation of radiation in the mid- and far- infrared relies primarily on lasers and coherent nonlinear optical phenomena driven by lasers. This wavelength range lacks of luminescent devices because the spontaneous emission rate…
High-efficiency micro-light-emitting diodes (Micro-LEDs) are key devices for next-generation display technology. However, when the mesa size is reduced to around tens of micrometers or less, the luminous efficiency is constrained by the…
A double-phase Ar detector can efficiently identify particles and reconstruct their positions. However, the properties of electroluminescence (EL) for secondary light emission in the gas phase are not fully understood. Earlier studies have…
In this paper we present the thermal and mechanical analysis of high-power light-emitting diodes (LEDs) with ceramic packages. Transient thermal measurements and thermo-mechanical simulation were performed to study the thermal and…
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile…
The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior.…
The NEXT-DEMO++ detector, a high-pressure xenon gas time projection chamber serving as a prototype for the NEXT-100 experiment, was used to measure the electroluminescence (EL) yield as a function of reduced electric field ($E/p$) across…