Related papers: Transport Through an Electrostatically Defined Qua…
Transport in a two-dimensional electron gas subject to an external magnetic field is analyzed in the presence of a \textit{longitudinal barrier.} We show that \textit{quantum interference of the edge states} bound by the longitudinal…
A small quantum dot coupled to two external leads is considered. Different signs of the dot-leads coupling matrix elements give rise to qualitatively different behavior of physical observables such as the conductance, the phase of the…
Quantum transport properties through some multilevel quantum dots sandwiched between two metallic contacts are investigated by the use of Green's function technique. Here we do parametric calculations, based on the tight-binding model, to…
We have considered the conductivity properties of a two dimensional electron gas (2DEG) in two different kinds of inhomogeneous magnetic fields, i.e.\ a disordered distribution of magnetic flux vortices, and a periodic array of magnetic…
The thermodynamic potential of an ideal nonrelativistic gas of two-dimensional electrons in crossed uniform magnetic and electric fields is constructed. For low temperatures and very weak electric fields, it is shown that the Hall…
We investigate electron transport through a finite two dimensional mesoscopic periodic potential, consisting of an array of lateral quantum dots with electron density controlled by a global top gate. We observe a transition from an…
We report on transport in the second Landau level in \emph{in-situ} back-gated two-dimensional electron gases in GaAs/Al$_x$Ga$_{1-x}$As quantum wells. Minimization of gate leakage is the primary heterostructure design consideration.…
A new fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon-germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to…
Phasonic degrees of freedom are unique to quasiperiodic structures, and play a central role in poorly-understood properties of quasicrystals from excitation spectra to wavefunction statistics to electronic transport. However, phasons are…
Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation…
We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…
We describe the electronic properties of a double dot for which the lateral coupling between the two vertical dots can be controlled in-situ with a center gate voltage (Vc) and the current flows through the two dots in series. When Vc is…
A quasi-two-dimensional (Q2D) electron liquid (EL) is formed at the interface of a semiconductor heterojunction. For an accurate characterization of the Q2D EL, many-body effects need to be taken into account beyond the random phase…
Motivated by the possibility of creating non-Abelian fields using cold atoms in optical lattices, we explore the richness and complexity of non-interacting two-dimensional electron gases (2DEGs) in a lattice, subjected to such fields. In…
We review recent transport experiments that reveal two-threshold voltage-current characteristics, marked by a significant increase in noise between the two threshold voltages, at low electron densities in the insulating regime in…
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…
We have fabricated high-mobility, two-dimensional electron gases in a GaAs quantum well on cylindrical surfaces, which allows to investigate the magnetotransport behavior under varying magnetic fields along the current path. A strong…
By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self…
We employ density functional theory to calculate the self consistent electronic structure, free energy and linear source-drain conductance of a lateral semiconductor quantum dot patterned via surface gates on the 2DEG formed at the…
We propose a new physical implementation of spin qubits for quantum information processing, namely defect states in antidot lattices defined in the two-dimensional electron gas at a semiconductor heterostructure. Calculations of the band…