Related papers: Transport through side-coupled double quantum dots…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
The temperature dependence of Coulomb blockade peaks of a one dimensional quantum dot is calculated. The Coulomb interaction is treated microscopically using the Luttinger liquid model. The electron interaction is assumed to be…
Motivated by recent developments on the fabrication and control of semiconductor-based quantum dot qubits, we theoretically study a finite system of tunnel-coupled quantum dots with the electrons interacting through the long-range Coulomb…
We study the zero-bias conductance through the system of two quantum dots, one of which is embedded directly between the source and drain electrodes, while the second dot is side-coupled to the first one through a tunneling junction.…
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum…
The electronic structure of two vertically coupled quantum dots containing two electrons is investigated in the presence of interdot tunneling. Our approach also includes the interdot exchange and we find that the tunneling is affected by…
We examine a quantum dot with $N_{\rm dot}$ levels which is strongly coupled to leads for varying number of channels $N$ in the leads. It is shown both analytically and numerically that for strong couplings between the dot and the leads, at…
We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe…
We develop a theory of electron transport through quantum dots that are weakly coupled to ferromagnetic leads. The theory covers both the linear and nonlinear transport regime, takes non-collinear magnetization of the leads into account,…
We have studied the temperature dependent thermopower of gate-defined, lateral quantum dots in the Coulomb blockade regime using an electron heating technique. The line shape of the thermopower oscillations depends strongly on the…
In this letter, we have considered an electron in a coupled quantum dot system interacting with a detector represented by a point contact. We present a dynamical model for wave function collapse in the strong coupling to the detector limit.…
We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the…
We have investigated few-body states in vertically stacked quantum dots. Due to small inter-dot tunneling rate, the coupling in our system is in a previously unexplored regime where electron-hole exchange is the dominant spin interaction.…
We study the transport through side-coupled double quantum dots, connected to normal and superconducting (SC) leads with a T-shape configuration. We find, using the numerical renormalization group, that the Coulomb interaction suppresses SC…
Nanoelectronics devices, such as quantum dot systems or single-molecule transistors, consist of a quantum nanostructure coupled to a macroscopic external electronic circuit. Thermoelectric transport between source and drain leads is…
We consider electron transport along a single-mode channel which is in contact, via tunnel junctions in its walls, with two quantum dots. Electron tunneling to and from the dots contributes to the electron backscattering, and thus modifies…
We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and…
In Si quantum dots, valley degree of freedom, in particular the generally small valley splitting and the dot-dependent valley-orbit phase, adds complexities to the low-energy electron dynamics and the associated spin qubit manipulation.…
Based on symmetry constraint that leads to the appearance of nodes in the wave functions of 3-electron systems at regular triangle configurations, it was found that, if the parameters of confinement are skillfully given and if a magnetic…
The theory of quantum transport through a dot under a finite bias voltage is developed using perturbation theory in the Keldysh formalism. It is found that the Kondo resonance splits into double peaks when the voltage exceeds the Kondo…