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In the past few years materials with protected gapless surface (edge) states have risen to the central stage of condensed matter physics. Almost all discussions centered around topological insulators and superconductors, which possess full…

Superconductivity · Physics 2013-10-01 Fa Wang , Dung-Hai Lee

Recently, higher-order topological insulators have been attracting extensive interest. Unlike the conventional topological insulators that demand bulk gap closings at transition points, the higher-order band topology can be changed without…

Other Condensed Matter · Physics 2022-06-15 Juan Du , Tianzi Li , Xiying Fan , Qicheng Zhang , Chunyin Qiu

Topological insulators represent a new quantum state of matter that are insulating in the bulk but metallic on the edge or surface. In the Dirac surface state, it is well-established that the electron spin is locked with the crystal…

After the classification of topological states of matter has been clarified for non-interacting electron systems, the theoretical connection between gapless boundary modes and nontrivial bulk topological structures, and their evolutions as…

Strongly Correlated Electrons · Physics 2018-08-15 M. Sasaki , A. Ohnishi , Nabyendu Das , K. -S. Kim , Heon-Jung Kim

Aiming at the future spintronics device applications of the spin-polarized surface states in three-dimensional topological insulator, a highly insulating bulk state and a tunable Dirac cone surface state are required. Here we employ a slab…

Materials Science · Physics 2020-01-01 Takao Kosaka , Kunihiko Yamauchi , Tamio Oguchi

We introduce new three-dimensional topological phases of two-band models using the Pontryagin-Thom construction. In symmetry class A these are the infinitely many Hopf-Chern topological insulators, which are hybrids of layered Chern…

Mesoscale and Nanoscale Physics · Physics 2016-07-27 Ricardo Kennedy

Since the advent of topological insulators hosting symmetry-protected Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological…

Materials Science · Physics 2015-10-14 B. M. Wojek , M. H. Berntsen , V. Jonsson , A. Szczerbakow , P. Dziawa , B. J. Kowalski , T. Story , O. Tjernberg

Gapless Dirac surface states are protected at the interface of topological and normal band insulators. In a binary superlattice bearing such interfaces, we establish that valley-dependent dimerization of symmetry-unrelated Dirac surface…

Materials Science · Physics 2014-10-31 Xiao Li , Fan Zhang , Qian Niu , Ji Feng

We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all devices the upper and lower surface states are independently tunable to the Dirac point…

Motivated by recent photoemission experiments on the surface of topological insulators we compute the spectrum of driven topological surface excitations in the presence of an external light source. We completely characterize the spectral…

Strongly Correlated Electrons · Physics 2013-10-30 Benjamin M. Fregoso , Y. H. Wang , N. Gedik , Victor Galitski

The appearance of topologically protected states at the surface of an ordinary insulator is a rare occurrence and to date only a handful of materials are known for having this property. An intriguing question concerns the possibility of…

Mesoscale and Nanoscale Physics · Physics 2014-07-16 Igor Popov , Mauro Mantega , Awadhesh Narayan , Stefano Sanvito

In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 Megan Romanowich , Mal-Soon Lee , Duck-Young Chung , Jung-Hwan Song , S. D. Mahanti , Mercouri G. Kanatzidis , Stuart H. Tessmer

We consider an interface between two strong time-reversal invariant topological insulators having surface states with opposite spin chirality, or equivalently, opposite mirror Chern number. We show that such an interface supports gapless…

Mesoscale and Nanoscale Physics · Physics 2019-06-26 Christophe De Beule , Rolando Saniz , Bart Partoens

Topological insulators (TIs) present a neoteric class of materials, which support delocalised, conducting surface states despite an insulating bulk. Due to their intriguing electronic properties, their optical properties have received…

The surface bound electronic states of three-dimensional topological insulators, as well as the edge states in two-dimensional topological insulators, are investigated in the presence of a circularly polarized light. The strong coupling…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 Andrii Iurov , Godfrey Gumbs , Oleksiy Roslyak , Danhong Huang

The 3D topological insulator (TI) PN junction under magnetic fields presents a novel transport property which is investigated both theoretically and numerically in this paper. Transport in this device can be tuned by the axial magnetic…

Mesoscale and Nanoscale Physics · Physics 2018-08-27 Ning Dai , Yan-Feng Zhou , Peng Lv , Qing-Feng Sun

Using a pair of p- and n-type semiconductors separated by a nanoscale vacuum gap, we introduce an optoelectronics element prototype, "photonic p-n junction", as an analogue of the electronic p-n junction, which is demonstrated to serve as…

Optics · Physics 2022-10-05 Deyu Xu , Junming Zhao , Linhua Liu

The Dirac cone on a surface of a topological insulator shows linear dispersion analogous to optics and its velocity depends on materials. We consider a junction of two topological insulators with different velocities, and calculate the…

Mesoscale and Nanoscale Physics · Physics 2011-10-18 Ryuji Takahashi , Shuichi Murakami

We have performed angle-resolved photoemission spectroscopy on Pb(Bi1-xSbx)2Te4, which is a member of lead-based ternary tellurides and has been theoretically proposed as a candidate for a new class of three-dimensional topological…

Mesoscale and Nanoscale Physics · Physics 2012-03-14 S. Souma , K. Eto , M. Nomura , K. Nakayama , T. Sato , T. Takahashi , Kouji Segawa , Yoichi Ando

The p-n junction has provided the basis for the semiconductor-device industry. Investigations of p-n junctions based on Mott insulators is still in its infancy. Layered Mott insulators, such as the cuprates or other transition metal-oxides,…

Strongly Correlated Electrons · Physics 2013-10-09 M. Charlebois , S. R. Hassan , R. Karan , D. Sénéchal , A. -M. S. Tremblay
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