Related papers: Telecommunication band InAs quantum dots and dashe…
We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to…
The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs…
Quantum systems as used for quantum computation or quantum sensing are nowadays often realized in solid state devices as e.g. complex Josephson circuits or coupled quantum-dot systems. Condensed matter as an environment influences heavily…
Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit…
Telecom wavelength quantum dots (QDs) are emerging as a promising solution for generating deterministic single photons compatible with existing fiber optic infrastructure. Emission in the low loss C band minimizes transmission losses,…
The rapidly developing quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber…
Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature…
We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe…
The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are…
Quantum emitters operating at telecom wavelengths are essential for the advancement of quantum technologies, particularly in the development of integrated on-chip devices for quantum computing, communication, and sensing. Coupling resonant…
The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been studied. The photoluminescence signal at 1650 nm from…
We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot…
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs)…
Dense arrays of semiconductor quantum dots are currently employed in highly efficient quantum dot lasers for data communications and other applications. Traditionally, the electronic properties of such quantum nanostructures have been…
Quantum networks have the potential to transform secure communication via quantum key distribution and enable novel concepts in distributed quantum computing and sensing. Coherent quantum light generation at telecom wavelengths is…
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg reflector…
The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $\mu$m, is investigated by means of time-resolved microphotoluminescence as a function of…
We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the…
The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum networks. Entangled light can be generated by solid state…
We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the optical quality or…