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Related papers: Thermal behavior of NIR active centers in Bi-doped…

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3D excitation-emission luminescence spectra of Bi-doped optical fibers of various compositions were measured in a wide wavelength range 450-1700 nm. Such luminescence spectra were obtained for Bi-doped pure silica and germania fibers, and…

Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active…

Materials Science · Physics 2015-06-15 Igor Razdobreev , Hicham El Hamzaoui , Vladimir B. Arion , Mohamed Bouazaoui

A detailed study of optical properties of bismuth-doped fibers based on SiO2 and GeO2 glasses containing no other dopants has been carried out. To provide important information about spectroscopic properties of IR bismuth-related active…

Optics · Physics 2015-03-18 Elena G. Firstova

First-principle study of bismuth-related oxygen-deficient centers ($=$Bi$\cdots$Ge$\equiv$, $=$Bi$\cdots$Si$\equiv$, and $=$Bi$\cdots$Bi$=$ oxygen vacancies) in Bi$_2$O$_3$-GeO$_2$, Bi$_2$O$_3$-SiO$_2$, Bi$_2$O$_3$-Al$_2$O$_3$-GeO$_2$, and…

Materials Science · Physics 2014-12-19 V. O. Sokolov , V. G. Plotnichenko , E. M. Dianov

First-principle study of possible bismuth-related centers in SiO2 and GeO2 hosts is performed and the results are compared with the experimental data. The following centers are modeled: trivalent and divalent Bi substitutional centers; BiO…

Materials Science · Physics 2013-05-23 V. O. Sokolov , V. G. Plotnichenko , E. M. Dianov

Among the various techniques used in luminescence thermometry, luminescence kinetics is considered the least sensitive to perturbations related to the optical properties of the medium containing the phosphor. For this reason, temperature…

Materials Science · Physics 2024-12-05 M. T. Abbas , M. Szymczak , V. Kinzhybalo , M. Drozd , L. Marciniak

The temperature dependence of optical constants of titanium nitride thin film is investigated using spectroscopic ellipsometry between 1.4 to 5 eV in the temperature range 300 K to 650 K in steps of 50 K. The real and imaginary parts of the…

Materials Science · Physics 2016-11-26 S. Tripura Sundari , R. Ramaseshan , Feby Jose , S. Dash , A. K. Tyagi

The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation…

Materials Science · Physics 2009-11-13 F. Messina , S. Agnello , R. Boscaino , M. Cannas , S. Grandi , E. Quartarone

Silicon films doped with Er and O were prepared by techniques of physical vapor deposition on crystalline silicon, ion beam mixing and oxygen incorporation through Ar+ and O2+ implantation, and thermal annealing. Processing steps were…

Materials Science · Physics 2012-02-03 Sufian Abedrabbo , Anthony Fiory

Absorption, luminescence and Raman spectra of interstitial bismuth atoms, $\mathrm{Bi}^{0}$, and negatively charged dimers, $\mathrm{Bi}^{2-}$, in alumosilicate, germanosilicate, phosphosilicate and phosphogermanate glasses networks are…

Materials Science · Physics 2011-01-11 V. O. Sokolov , V. G. Plotnichenko , E. M. Dianov

Due to their exceptional plasmonic properties, noble metals such as gold and silver have been the materials of choice for the demonstration of various plasmonic and nanophotonic phenomena. However, noble metals' softness, lack of…

The near infrared (NIR) photoluminescence (PL) in Bismuth-doped aluminosilicate glasses was reported about of 16 years ago. Although it has since been developed various kinds of fiber lasers and amplifiers based on the Bismuth-doped silica…

Materials Science · Physics 2015-12-09 O. V. Laguta , B. I. Denker , B. I. Galagan , S. E. Sverchkov , I. M. Razdobreev

Bismuth (Bi) having a large atomic number is characterized by the strong spin-orbit coupling (SOC) and is a parent compound of many 3D topological insulators (TIs). The ultrathin Bi films are supposed to be 2D TIs possessing the nontrivial…

Strongly Correlated Electrons · Physics 2023-01-16 Natalia Kovaleva , Dagmar Chvostova , Ladislav Fekete , Alexandr Dejneka

Experimental and computer-modeling studies of spectral properties of crystalline AgCl doped with metal bismuth or bismuth chloride are performed. Broad near-IR luminescence band in the 0.8--1.2mkm range with time dependence described by two…

IR luminescence and absorption in bismuth-doped silica glass-core fibers observed recently (see [arXiv:1106.2969v1 [physics.optics]) are argued to be caused by transitions in interstitial BiO molecules

Materials Science · Physics 2011-12-30 V. O. Sokolov , V. G. Plotnichenko , E. M. Dianov

Oxyfluorides containing up to 80 wt% recycled glass from end-of-life solar panels have been investigated. Reduced processing temperature and high transparency have shown that the material has potential for optical applications. In this…

Electrical conduction and relaxation phenomena in bismuth borate glasses in the composition 2Bi2O3-B2O3 (Bi4B2O9) were investigated. Dielectric studies carried out on these glasses revealed near constant loss (NCL) response in the 1 kHz to…

Materials Science · Physics 2011-08-01 G Paramesh , K B R Varma

Ionoluminescence (IL) and photoluminescence (PL) of trivalent erbium ions (Er3+) in Gd2O3 nanopowder host activated with Bi3+ ions has been studied in order to establish the link between changes in luminescent spectra and temperature of the…

Chemical Physics · Physics 2016-06-28 Zuzanna Boruc , Grzegorz Gawlik , Bartosz Fetliński , Marcin Kaczkan , Michał Malinowski

We experimentally demonstrate optical bistability in Er3+-Yb3+ phosphate glass microspheres at 295 K. Bistability is associated with both Er3+ fluorescence and lasing behavior, and chromatic switching. The chromatic switching results from…

Optics · Physics 2009-11-13 J. M. Ward , D. G. O'Shea , B. J. Shortt , S. Nic Chormaic

We have characterized thermal susceptibilities of the spectral band at 740 nm of silicon-vacancy (SiV) centers in Si- and Si,P-doped nanodiamonds over a temperature range from 295 K to 350 K, which is of interest for thermometry in…

Mesoscale and Nanoscale Physics · Physics 2019-06-26 Sumin Choi , Viatcheslav N. Agafonov , Valery A. Davydov , L. F. Kulikova , Taras Plakhotnik
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