Related papers: Quantized conductance in SnO2 nanobelts with recta…
We report direct measurements of the potential barriers and electronic coupling between nanowire segments within a sketch-based oxide nanotransistor (SketchFET) device. Near room temperature, switching is governed by thermally activation…
The optical conductivities of two one-dimensional narrow-gap semiconductors, anticrossing quantum Hall edge states and carbon nanotubes, are studied using bosonization method. A lowest order renormalization group analysis indicates that the…
Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…
We report the experimental observation of quantized conductance by Rashba bands at the surface of 50-nm Bi nanowires. With increasing magnetic fields along the wire axis, the wires exhibit a stepwise increase of conductance with as many as…
We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron after preliminary oxidation of the n-type Si (100) surface. These Si-based nanostructures represent the p-type high…
We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident…
We report the experimental observation of conductance quantization in graphene nanoribbons, where 1D transport subbands are formed due to the lateral quantum confinement. We show that this quantization in graphene nanoribbons can be…
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron…
Interfaces between transition-metal oxides are able to host two-dimensional electron gases (2DEGs) and exhibit exotic quantum phenomena. Here we report the observation of superconductivity below 230 mK for the heterostructure composed of…
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…
The conductance quantization and shot noise below the first conductance plateau $G_0 = 2e^2/h$ are measured in a quantum point contact fabricated in a GaAs/AlGaAs tunnel-coupled double quantum well. From the conductance measurement, we…
We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the…
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few…
The attachment of semiconducting nanoparticles to carbon nanotubes is one of the most challenging subjects in nanotechnology. Successful high coverage attachment and control over the charge transfer mechanism and photo-current generation…
Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of…
The electronic transport and the sensing performance of an individual SnO2 crossed nanowires device in a three-terminal field effect configuration were investigated using a combination of macroscopic transport measurements and Scanning…
Electronic transport properties of bismuth nanocontacts are analyzed by means of a low temperature scanning tunneling microscope. The subquantum steps observed in the conductance versus elongation curves give evidence of atomic…
Two dimensional SrTiO3-based interfaces stand out among non-centrosymmetric superconductors due to their intricate interplay of gate tunable Rashba spin-orbit coupling and multi-orbital electronic occupations, whose combination…
We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS$_2$. Upon electron accumulation, at surface densities close to -or just larger than- 10$^{14}$ cm$^{-2}$,…