Related papers: Introduction to Metal-Insulator Transitions
Experimental evidence for the possible universality classes of the metal-insulator transition (MIT) in two dimensions (2D) is discussed. Sufficiently strong disorder, in particular, changes the nature of the transition. Comprehensive…
Metal-insulator transitions involve a mix of charge, spin, and structural degrees of freedom, and when strongly-correlated, can underlay the emergence of exotic quantum states. Mott insulators induced by the opening of a Coulomb gap are an…
A possibility of a metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2:1 based on a one-dimensional extended Hubbard…
In the presence of quenched disorder, the interplay between local magnetic-moment formation and Anderson localization for electrons at a zero-temperature, metal-insulator transition (MIT) remains a long unresolved problem. Here, we study…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…
More than half a century after first being proposed by Sir Nevill Mott, the deceptively simple question of whether the interaction-driven electronic metal-insulator transition may be continuous remains enigmatic. Recent experiments on…
The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…
We discuss the possibility of realizing metal-insulator transitions with ultracold atoms in two-dimensional optical lattices in the presence of artificial gauge potentials. Such transitions have been extensively studied for magnetic fields…
Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing…
Metal-insulator transitions driven by magnetic fields have been extensively studied in 2D, but a 3D theory is still lacking. Motivated by recent experiments, we develop a scaling theory for the metal-insulator transitions in the…
By means of exact diagonalizations, the Bernevig-Hughes-Zhang model at quarter-filling in the limit of strong Hubbard on-site repulsion is investigated. We find that the non-interacting metallic state will be turned into a Chern insulator…
Mott physics is characterized by an interaction-driven metal-to-insulator transition in a partially filled band. In the resulting insulating state, antiferromagnetic orders of the local moments typically develop, but in rare situations no…
We investigate metal-insulator transitions in the Holstein-Hubbard model as a function of the on-site electron-electron interaction U and the electron-phonon coupling g. We use several different numerical methods to calculate the phase…
We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…
Local magnetic moments in disordered sytems can be described in terms of annealed magnetic disorder, in addition to the underlying quenched disorder. It is shown that for noninteracting electron systems at zero temperature, the annealed…
We review our recent results on Anderson localization in systems of two interacting particles coupled by contact interactions. Based on an exact mapping to an effective single-particle problem, we numerically investigate the occurrence of…
Recent advances in many-body physics have made it possible to study correlated electron systems at the two-particle level. In Dynamical Mean-Field theory, it has been shown that the metal-insulator phase diagram is closely related to the…
We study three regimes of the Mott transitions characterized by classical, marginally quantum and quantum. In the classical regime, the quantum degeneracy temperature is lower than the critical temperature of the Mott transition, Tc, below…
The organic salt $\alpha$-(BEDT-TTF)$_2$I$_3$ is considered a model system for metal-insulator transition due to electronic charge ordering at $T_{\rm CO}=135$~K. The optical properties obtained from polarized reflection measurements above…
We calculate the corrections to the conductivity and compressibility of a disordered metal when the mean free path is smaller than the screening length. Such a condition is shown to be realized for low densities and large disorder. Analysis…