Related papers: Small-Signal Capacitance and Current Parameter Mod…
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing…
We have investigated the non-quasi-static (NQS) effects in graphene field-effect transistors (GFETs), which are relevant for GFET operation at high frequencies as a result of significant carrier inertia. A small-signal NQS model is derived…
A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is…
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS structure, opening a new route for the realization of…
We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly…
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…
In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require…
The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport equation in an atomistic basis set self-consistently with a…
We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies…
We report radio frequency (rf) electrical readout of graphene mechanical resonators. The mechanical motion is actuated and detected directly by using a vector network analyzer, employing a local gate to minimize parasitic capacitance. A…
Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous…
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…
A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…
Local electrical imaging using microwave impedance microscope is performed on graphene in different modalities, yielding a rich hierarchy of the local conductivity. The low-conductivity graphite oxide and its derivatives show significant…
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…
Carbon electronics based on carbon nanotube array field-effect transistors (AFETs) and 2-dimensional graphene field-effect transistors (GFETs) have recently attracted significant attention for potential RF applications. Here, we explore the…
We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…
In this paper, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. Drain current and LFN of two short…
This study establishes a unified framework for interpreting dynamic capacitive responses in InGaN-based light-emitting diodes (LEDs) through forward-bias capacitance-voltage-frequency spectroscopy. A hybrid impedance model integrating…