Related papers: Umklapp-Assisted Electron Transport Oscillations i…
Umklapp processes play a fundamental role as the only intrinsic mechanism that allows electrons to transfer momentum to the crystal lattice and, therefore, provide a finite electrical resistance in pure metals. However, umklapp scattering…
Effects of the electron-electron interaction on tunneling into a metal in ultra-high magnetic field (ultra-quantum limit) are studied. The range of the interaction is found to have a decisive effect both on the nature of the field-induced…
In many composites the electrical transport takes place only by tunneling between isolated particles. For a long time it was quite a puzzle how, in spite of the incompatibility of tunneling and percolation networks, these composites conform…
At low temperatures, the transport through a superconducting-normal tunnel interface is due to tunneling of electrons in pairs. The probability for this process is shown to depend on the layout of the electrodes near the tunnel junction,…
Motivated by the mid-infrared scenario for high-temperature superconductivity proposed by Leggett, the effects of Umklapp processes on the density-density correlation function in the presence of long-range Coulomb interaction have been…
Umklapp processes are known to exist in cristalline materials, where they control important properties such as thermal conductivity, heat capacity and electrical conductivity. In this work we report the provocative observation of Umklapp…
Experimental and theoretical studies on transport in semiconductor samples with superconducting electrodes are reported. We focus on the samples close to metal-insulator transition. In metallic samples, a peak of negative magnetoresistance…
Recent experimental advances have been marked by the observations of ballistic electron transport in moir\'e superlattices in highly aligned heterostructures of graphene and hexagonal boron nitride (hBN). Here, we predict that a…
Despite many similarities between electronics and optics, the hopping of the electron on a discrete atomic lattice gives rise to energy band nonparabolicity and anisotropy. The crucial influences of this effect on material properties and…
The mean free path of phonons in superlattices is estimated. It is shown to be strongly dependent on the superlattice period due to the Umklapp scattering in subbands. It first falls with increasing the superlattice period until it becomes…
We investigate transport through a tunnelling junction between an uncorrelated metallic lead and a Luttinger liquid when the latter is subjected to a time dependent perturbation. The tunnelling current as well as the electron energy…
We consider the effect of electron correlations on tunneling from a 2D electron layer in a magnetic field parallel to the layer. A tunneling electron can exchange its momentum with other electrons, which leads to an exponential increase of…
It is shown that in a structure consisting of a superconducting ring-shaped electrode overlapped by a normal metal contact through a thin oxide barrier, measurements of the tunnel current in magnetic field can probe persistent currents in…
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions…
Electron tunneling through mesoscopic metallic grains can be treated perturbatively only provided the tunnel junction conductances are sufficiently small. If it is not the case, fluctuations of the grain charge become strong. As a result…
We theoretically study electronic transport through a layer of quantum dots connecting two metallic leads. By the inclusion of an inductor in series with the junction, we show that steady electronic transport in such a system may be…
We study metallic transport in an effective model that describes the coupling of electrons to fluctuating magnetic moments with full SU(2) symmetry, exhibiting characteristic behavior of metals at the approach of the Mott transition. We…
We develop the concept of scattering matrix and we use it to perform stable numerical calculations of resonant tunneling of electrons through a multiple potential barrier in a semiconductor heterostructure. Electrons move in two external…
An electron transport is studied in the system which consists of scanning tunneling microscopy-single molecule magnet-metal. Due to quantum tunneling of magnetization in single-molecule magnet, linear response conductance exhibits stepwise…
The interplay between the electron transport in metal/ferroelectric/metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of…