Related papers: Room temperature current suppression on multilayer…
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or…
Superconducting devices, which rely on modulating a complex superconducting order parameter in a Josephson junction, have been developed for low power logic operations, high-frequency oscillators, and exquisite magnetic field sensors.…
We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni/octanethiol/Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the…
Lateral heterostructures of two-dimensional (2D) materials, integrating different phases or materials into a single piece of nanosheet, have attracted intensive research interests in the past few years for high-performance electronic and…
Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current…
Diluted magnetic semiconductors (DMSs) based on group-IV materials are desirable for spintronic devices compatible with current silicon technology. In this work, amorphous Mn-doped SiGe thin films were first fabricated on Ge substrates by…
We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the…
Electronic current flowing in a molecular electronic junction dissipates significant amounts of energy to vibrational degrees of freedom, straining and rupturing chemical bonds and often quickly destroying the integrity of the molecular…
Two-dimensional (2D) magnetic materials with strong magnetostriction are interesting systems for strain-tuning the magnetization, enabling potential for realizing spintronic and nanomagnetic devices. Realizing this potential requires…
When a charge current is applied to a junction comprising two different conductors, its temperature increases or decreases depending on the direction of the charge current. This phenomenon is called the Peltier effect, which is used in…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
The appealing feature of molecular electronics is the possibility of exploiting functionality built within a single molecule. This functionality can be employed, for example, for sensing or switching purposes. Thus, ideally, the associated…
Controlling the flow of matter down to micrometer-scale confinement is of central importance in materials and environmental sciences, with direct applications in nano-microfluidics, drug delivery and biothechnology. Currents of…
Chiral edge currents play an important role in characterizing topological matter. In atoms, they have been observed at such a low temperature that the atomic motion can be measured. Here we report the first experimental observation of…
Spatial confinement of electronic topological surface states (TSS) in topological insulators poses a formidable challenge because TSS are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum…
Self-assembled-monolayer (SAM) molecular junctions (MJs) constitute a promising building block candidate for future molecular electronic devices. Transport properties of SAM-MJs are usually calculate using either the phenomenological…
Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of…
Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first…