Related papers: Electron-hole puddles in the absence of charged im…
We characterize the carrier density profile of the ground state of graphene in the presence of particle-particle interaction and random charged impurity for zero gate voltage. We provide detailed analysis on the resulting spatially…
When graphene is close to charge neutrality, its energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles, which determine the properties of graphene at low carrier density. However, the details of the…
The electronic density of states of graphene is equivalent to that of relativistic electrons. In the absence of disorder or external doping the Fermi energy lies at the Dirac point where the density of states vanishes. Although transport…
Single-layer graphene sheets are typically characterized by long-wavelength corrugations (ripples) which can be shown to be at the origin of rather strong potentials with both scalar and vector components. We present an extensive…
The charge carrier density in graphene on a dielectric substrate such as SiO$_2$ displays inhomogeneities, the so-called charge puddles. Because of the linear dispersion relation in monolayer graphene, the puddles are predicted to grow near…
We consider a graphene sheet in the vicinity of a substrate, which contains charged impurities. An analytic expression for the probability distribution function of voltage fluctuations due to the charged impurities is derived. The…
Graphene on a dielectric substrate exhibits spatial doping inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the…
The experimentally observed metal-to-insulator transition in hydrogenated graphene is numerically confirmed for actual sized graphene samples and realistic impurity concentrations. The eigenstates of our tight-binding model with…
We investigate the effects of charged impurity distributions and carrier-carrier interactions on electronic transport in graphene on SiO$_2$ by employing a self-consistent coupled simulation of carrier transport and electrodynamics. We show…
Using scanning tunneling microscopy, we have imaged local charge density fluctuations in monolayer graphene. By placing a small gold nanoparticle on the end of the STM tip, a charge sensor is created. By raster scanning the tip over the…
We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to…
In this paper the mono-layer graphene at the charge neutrality point is considered whithin Thomas-Fermi-Dirac theory, treating inhomogeneous external potentials and electron-electron interactions on equal footing. We present some general…
The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and…
We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that electron-hole conduction asymmetry is due to imbalanced carrier injection from metallic electrodes. Here, we show that metallic…
The relativistic nature of Dirac electrons and holes in graphene profoundly affects the way they interact with impurities. Signatures of the relativistic behavior have been observed recently in scanning tunneling measurements on individual…
We investigate bilayer graphene transport in the presence of electron-hole puddles induced by long-range charged impurities in the environment. We explain the insulating behavior observed in the temperature dependent conductivity of low…
We suggest a simple model of disorder in graphene assuming that there are randomly distributed positive and negative centers with equal concentration $N/2$ in the bulk of silicon oxide substrate. We show that at zero gate voltage such…
Understanding disorder in graphene is essential for electronic applications; in contrast to conventional materials, the extraordinarily low electron-phonon scattering1, 2 in graphene implies that disorder3-7 dominates its resistivity even…
We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental…
In an ideal graphene sheet charge carriers behave as two-dimensional (2D) Dirac fermions governed by the quantum mechanics of massless relativistic particles. This has been confirmed by the discovery of a half-integer quantum Hall effect in…