Related papers: Graphene: Junctions and STM Spectra
The role of defect-induced zero-energy modes on charge transport in graphene is investigated using Kubo and Landauer transport calculations. By tuning the density of random distributions of monovacancies either equally populating the two…
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in…
This article reviews the basic theoretical aspects of graphene, a one atom thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric…
Anderson's orthogonality catastrophe in graphene, at energies close to the Dirac point, is analyzed. It is shown that, in clean systems, the orthogonality catastrophe is suppressed, due to the vanishing density of states at the Dirac point.…
Evolution of electronic inhomogeneities with back-gate voltage in graphene on SiO$_2$ was studied using room temperature scanning tunneling microscopy and spectroscopy. The reversal of local contrast in some places in the STS maps and sharp…
By means of an envelope function analysis, we perform a numerical investigation of the conductance behavior of a graphene structure consisting of two regions (dots) connected to the entrance and exit leads through constrictions and…
The physics of graphene is acting as a bridge between quantum field theory and condensed matter physics due to the special quality of the graphene quasiparticles behaving as massless two dimensional Dirac fermions. Moreover, the particular…
Metal atoms on graphene, when ionized, can act as a point charge impurity to probe a charge response of graphene with the Dirac cone band structure. To understand the microscopic physics of the metal-atom-induced charge and spin…
It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by…
A two-dimensional periodic array of scatterers has been introduced to a single layer of graphene in the presence of an external magnetic field perpendicular to the graphene layer. The eigenvalue equation for such a system has been solved…
In an ideal graphene sheet charge carriers behave as two-dimensional (2D) Dirac fermions governed by the quantum mechanics of massless relativistic particles. This has been confirmed by the discovery of a half-integer quantum Hall effect in…
Based on the BTK theory, we investigate the tunneling conductance in a uniaxially strained graphene-based normal metal (NG)/ barrier (I)/superconductor (SG) junctions. In the present model, we assume that depositing the conventional…
The electrons in graphene for energies close to the Dirac point have been found to form strongly interacting fluid. Taking this fact into account we have extended previous work on the transport properties of graphene by taking into account…
In this article, we employ the transfer matrix method (TMM) to analytically explore the impact of uniaxial strain on electron scattering in graphene under locally periodic and super-periodic electrostatic potential. Our study reveals that…
We investigate the vacancy effects on quasiparticle band structure of graphene near the Dirac point. It is found that each Dirac nodal point splits into two new nodal points due to the coherent scattering among vacancies. The splitting…
Graphene, being one-atom thick, is extremely sensitive to the presence of adsorbed atoms and molecules and, more generally, to defects such as vacancies, holes and/or substitutional dopants. This property, apart from being directly usable…
We use large-scale DFT calculations to investigate with unprecedented detail the so-called spin-orbit (SO) proximity effect in graphene adsorbed on the Pt(111) and Ni(111)/Au semi-infinite surfaces, previously studied via spin and angle…
Based on the tight-binding formalism, we investigate the Anderson and the Kondo model for an adaom magnetic impurity above graphene. Different impurity positions are analyzed. Employing a partial wave representation we study the nature of…
We study Josephson effect in graphene superconductor- barrier- superconductor junctions with short and wide barriers of thickness $d$ and width $L$, which can be created by applying a gate voltage $V_0$ across the barrier region. We show…
The $\pi$-electronic structure of graphene in the presence of a modulated electric potential is investigated by the tight-binding model. The low-energy electronic properties are strongly affected by the period and field strength. Such a…