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Because of the ultrafast and photon-driven nature of the transport in their active region, we demonstrate that quantum cascade lasers can be operated as resonantly amplified terahertz detectors. Tunable responsivities up to 50 V/W and noise…
The double quantum dot device benefits from the advantages of both the spin and charge qubits, while offering ways to mitigate their drawbacks. Careful gate voltage modulation can grant greater spinlike or chargelike dynamics to the device,…
We measure the shot noise of a quantum point-contact using a capacitively coupled InAs double quantum dot as an on-chip sensor. Our measurement signals are the (bidirectional) interdot electronic tunneling rates which are determined by…
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…
We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the ``linear combination of bulk bands'' method. We present a detailed comparison with experiment,…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
A GaAs/AlGaAs based two-qubit quantum device that allows the controlled generation and straightforward detection of entanglement by measuring a stationary current-voltage characteristic is proposed. We have developed a two-particle Green's…
Charge detection utilizing a highly biased quantum point contact has become the most effective probe for studying few electron quantum dot circuits. Measurements on double and triple quantum dot circuits is performed to clarify a back…
Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers…
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…
Quantum devices with a large number of gate electrodes allow for precise control of device parameters. This capability is hard to fully exploit due to the complex dependence of these parameters on applied gate voltages. We experimentally…
We show that detuned optical pulse trains with a modest spectral width can polarize nuclear spins in InAs quantum dots. The pulse bandwidth is large enough to excite a coherent superposition of both electron spin eigenstates in these…
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by…
We present a study of the nonlinear intersubband (ISB) response of conduction electrons in a GaAs/AlGaAs quantum well to strong THz radiation, using a density-matrix approach combined with time-dependent density-functional theory. We…
The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum…
Minimizing decoherence due to coupling of a quantum system to its fluctuating environment is at the forefront of quantum information science and photonics research. Nature sets the ultimate limit, however, given by the strength of the…
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…
Triggered, indistinguishable, single photons play a central role in various quantum photonic implementations. Here, we realize a novel n$^+-$i$-$n$^{++}$ diode structure embedding semiconductor quantum dots: the gated device enables…
Incorporating a variable capacitance diode into a radio-frequency matching circuit allows us to in-situ tune the resonance frequency of an RF quantum point contact, increasing the versatility of the latter as a fast charge sensor of a…
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs…