Related papers: Insulator-to-Metal Transition in Selenium-Hyperdop…
In the present work, an infrared LED is used to photodope MBE-grown Si:Al(0.3)Ga(0.7)As, a well known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport…
The quantum spin liquid candidate NaYbSe$_2$ was recently reported to exhibit a Mott transition under pressure. Superconductivity was observed in the high-pressure metallic phase, raising the question concerning its relation with the…
Band bending at semiconductor surfaces induced by chemical doping or electric fields can create metallic surfaces with properties not found in the bulk, such as high electron mobility, magnetism or superconductivity. Optical generation of…
We present a novel route for attaining unconventional superconductivity (SC) in a strongly correlated system without doping. In a simple model of a correlated band insulator (BI) at half-filling we demonstrate, based on a generalization of…
We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner…
We present a combined experimental and theoretical study of the electronic structure of the intermetallic compound TiGePt by means of photoelectron spectroscopy, x-ray absorption spectroscopy and fullpotential band structure calculations.…
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…
In high temperature cuprate superconductors, it is now generally agreed that the parent compound is a Mott insulator and superconductivity is realized by doping the antiferromagnetic Mott insulator. In the iron-based superconductors,…
We study the optical response of a strongly correlated electron system near the metal-insulator transition using a mapping to the sine-Gordon model. With semiclassical quantization, the spectral weight is distributed between a Drude peak…
Pressure-induced insulator-to-metal transition (IMT) has been studied in the van der Waals compound iron thiophosphate (FePS3) using first-principles calculations within the periodic linear combination of atomic orbitals method with hybrid…
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…
We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…
By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($\sigma$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
Discovery of superconductivity in the impurity band formed by heavy doping of boron into diamond (C:B) as well as doping of boron into silicon (Si:B) has provided a rout for the possibility of new families of superconducting materials.…
Although most insulators are expected to undergo insulator to metal transition on lattice compression, tetrahedral semiconductors Si, GaAs and InSb can become metallic on compression as well as by expansion. We focus on the transition by…
A simple model of cuprate superconductivity with an electron spectrum prepared by doping is developed. The pair-transfer interaction couples the itinerant band with two components ("hot'' and "cold'') of the defect subsystem. There are…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
Hyperdoped metastable sulfur atoms endow crystalline silicon with a strong sub-bandgap light absorption. In order to explore such metastable states, we develop a new high-throughput first-principles calculation method to search for all of…
Topological insulators are characterized by the existence of band inversion and the possibility of the realization of surface states. Doping with a magnetic atom, which is a source of the time-reversal symmetry breaking, can lead to…