Related papers: Optical spin injection and spin lifetime in Ge het…
A previous publication has shown that the in-plane polarization (IPP) component of a polarized 0.97-GeV/c deuteron beam in the COSY storage ring may acquire a polarization half-life in excess of 1000 s through a combination of beam…
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…
We use phase-resolved transient grating spectroscopy to measure the propagation of spin helices in a high mobility $n$-GaAs/AlGaAs quantum well with an applied in-plane electric field. At relatively low fields helical modes crossover from…
GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface.…
We consider a two-dimensional structure with spin-orbit-related splitting of the electron (hole) spectrum and calculate the edge spin density which appears due to the intrinsic mechanism of spin-orbit interaction in the presence of a charge…
Mapping the physical dipolar Hamiltonian of a solid-state network of nuclear spins onto a system of nearest-neighbor couplings would be extremely useful for a variety of quantum information processing applications, as well as NMR structural…
We report on unprecedented short-term variations detected in the optical flux from the black hole binary system, V4641 Sgr. Amplitudes of the optical fluctuations were larger at longer time scales, and surprisingly reached ~60% around a…
Spin currents offer a way to control static and dynamic magnetic properties, and therefore they are crucial for next-generation MRAM devices or spin-torque oscillators. Manipulating the dynamics is especially interesting within the context…
Optically addressable solid-state spins have been extensively studied for quantum technologies, offering unique advantages for quantum computing, communication, and sensing. Advancing these applications is generally limited by finding…
Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction which enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long…
Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature…
We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light…
The electron spin coherence in n-doped and undoped, self-assembled CdSe/Zn(S,Se) quantum dots has been studied by time-resolved pump-probe Kerr rotation. Long-lived spin coherence persisting up to 13 ns after spin orientation has been found…
We theoretically investigate spin dynamics in spin-orbit-coupled materials. In the ballistic limit, the spin lifetime is dictated by dephasing that arises from energy broadening plus a non-uniform spin precession. For the case of clean…
The coherent spin dynamics of resident carriers, electrons and holes, in semiconductor quantum structures is studied by periodical optical excitation using short laser pulses and in an external magnetic field. The generation and dephasing…
We report experimental results of the effect of Ka-band microwave on the spin dynamics of electrons in a 2D electron system in a GaAs/Al0.35Ga0.65As heterostructure, via time-resolved Kerr rotation measurements. While the microwave reduces…
We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as…
We report a comprehensive study of stochastic electron spin fluctuations -- spin noise -- in lightly doped ($n$-type) bulk GaAs, which are measured using sensitive optical magnetometry based on off-resonant Faraday rotation. Frequency…