Related papers: Lasing in planar semiconductor diodes
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
Erbium-doped lithium niobate on insulator (Er:LNOI) is a promising platform for photonic integrated circuits as it adds gain to the LNOI system and enables on-chip lasers and amplifiers. A challenge for Er:LNOI laser is to increase its…
Parameter regulations of narrow-linewidth fiber lasers in frequency domain has drawn considerable interests for widespread applications in the light quantum computing, precise coherent detection, and generation of micro-waves. All-optical…
The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission…
We present the development of a high power fibre laser system to investigate its suitability for use in a transverse electron beam profile monitor i.e. a laserwire. A system capable of producing individual pulses up to $165.8 \pm 0.4 \mu$J…
Three dimensional (3D) fast (< 0.5 hour) printing of micro-optical elements down to sub-wavelength resolution over 100 micrometers footprint areas using femtosecond (fs-)laser oscillator is presented. Using sub-1 nJ pulse energies, optical…
A planar reflective phaser based on an open-ended edge-coupled-line structure is proposed. This phaser is the first reported phaser that combines the benefits of high resolution, inherent to cross-coupled resonator reflective phasers, and…
One of the prominent platforms for quantum technologies, cold atoms require reliable laser systems. We present the design, implementation, and characterization of a simple, compact, and economical laser system at 780 nm, entirely based on…
We demonstrate an injection-locked 399 nm laser system with up to 1 W output power and a locked power fraction of 0.57. The system consists of a high power, multimode diode laser that is seeded by 5 mW from a single-mode external cavity…
Multi-photon lithography has emerged as a powerful tool for photonic integration, allowing to complement planar photonic circuits by 3D-printed freeform structures such as waveguides or micro-optical elements. These structures can be…
We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in…
In this work, we demonstrate that in a regime of strong modulation, by generating pulses of the length of the order of a few cavity lifetimes (hundreds of ps), a broadband quantum cascade laser can be driven to lase on a bandwidth (250cm-1)…
Semiclassical multimode laser theory is extended to gas lasers with open two-dimensional resonators of arbitrary shape. The Doppler frequency shift of the linear-gain coefficient leads to an additional linear coupling between the modes,…
Narrow-linewidth lasers have high spectral purity, long coherent length and low phase noise, so they have important applications in cold atom physics, quantum communication, quantum information processing and optical precision measurement.…
The dream of physico-chemists to control molecular reactions with light beyond electronic excitations pushes the development of laser pulse shaping capabilities in the mid-infrared (MIR) spectral range. Here, we present a compact optical…
To benefit high-power interferometry and the creation of low-noise light sources, we develop a simple lead-compensated photodetector enabling quantum-limited readout from 0.3 mW to 10 mW and 10 k$\Omega$ transimpedance gain from 85 Hz - 35…
Demand for low-noise, continuous-wave, frequency-tunable lasers based on semiconductor integrated photonics has been advancing in support of numerous applications. In particular, an important goal is to achieve narrow spectral linewidth,…
We report a 2\mu m ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse…
We demonstrate theoretically that robust mode-locking can be achieved on a semiconductor chip with a waveguide array architecture. The waveguide arrays are used as an ideal saturable absorption mechanism for initial noise start-up as well…
We report ultra-stable locking of a commercially available extended cavity diode laser to a vibration-insensitive high finesse Fabry-Perot cavity. A servo bandwidth of 2 MHz is demonstrated. The absolute stability of the diode laser after…