Related papers: Lasing in planar semiconductor diodes
A dual-polarization balanced superconductor-insulator-superconductor mixer operating at 2 mm wavelength is realized in form of a monolithic planar integrated circuit. Planar orthomode transducers and LO couplers are enabled by using silicon…
We report a single-frequency, narrow-linewidth semiconductor pulsed laser based on pump current modulation and optical injection locking technique. A monolithic non-planar ring oscillator laser is employed as the seed source to guarantee…
We report on the characterization of the timing stability of passively mode-locked discrete mode diode laser sources. These are edge-emitting devices with a spatially varying refractive index profile for spectral filtering. Two devices with…
Diode lasers enable one to continuously cover the 730 to 1100 nm range as well as the 370 to 550 nm range by frequency doubling, but a large part of the electro-magnetic spectrum spanning from green to red remains accessible only through…
Terahertz communications is a promising modality for future short-range point-to point wireless data transmission at rates up to terabit per second. A milestone towards this goal is the development of an integrated transmitter and receiver…
Recently, there has been a growing interest in integrated THz photonics for various applications in communications, spectroscopy and sensing. We present a new integrated photonic platform based on active and passive elements integrated in a…
Self-injection locking of a diode laser to a high-quality-factor microresonator is widely used for frequency stabilization and linewidth narrowing. We constructed several microresonator-based laser sources with measured instantaneous…
Laser-based displays are highly sought after for their superior brightness and color performance, especially in advanced applications like augmented reality (AR). However, their broader adoption has been hindered by bulky projector designs…
We made an interferometric Michelson type setup and a simple holographic setup to demonstrate the feasibility of interferometric and holographic techniques by means of a diode laser. The laser was made by using a common diode available as a…
There is a great desire to extend ultrasonic techniques to the imaging and characterization of nanoobjects. This can be achieved by picosecond ultrasonics, where by using ultrafast lasers it is possible to generate and detect acoustic waves…
We demonstrate a C-band wavelength-tunable microlaser with an Er3+ doped high quality (~1.02x10^6) lithium niobate microdisk resonator. With a 976 nm continuous-wave pump laser, lasing action can be observed at a pump power threshold as low…
Silicon photonics, compatible with large-scale silicon manufacturing, is a disruptive photonic platform that has indicated significant implications in industry and research areas (e.g., quantum, neuromorphic computing, LiDAR). Cutting-edge…
Silicon modulators have garnered considerable attention owing to their potential applications in high-density integration and high-speed modulation. However, they are increasingly challenged by the limited 3 dB bandwidth as the demand for…
Laser cutting of semiconductor wafers and transparent dielectrics has become a dominant process in manufacturing industries, encompassing a wide range of applications from flat display panels to microelectronic chips. Limited by the…
We present a current-modulation technique for diode-laser systems that is specifically designed for high-bandwidth laser-frequency stabilization and wideband frequency modulation with a flat transfer function. It consists of a dedicated…
Tunable lasers are essential for optical communication, spectroscopy, and precision sensing, where flexible and fast control of the laser wavelength is needed. However, conventional tunable laser systems often rely on mechanical actuation,…
A guided-wave chip laser operating in a single longitudinal mode at 2860 nm is presented. The cavity was set in the Littman-Metcalf configuration to achieve single-frequency operation with a side-mode suppression ratio above 33 dB. The chip…
We report the first demonstration to our knowledge of a continuously tunable picosecond laser operating around 1 MHz. The emission can be tuned from 640 to 685 nm and the repetition rate from 200 kHz to 1 MHz with a pulse duration of less…
Broad area laser diodes are attractive for the high optical power they can produce. Unfortunately, this high power normally comes at the cost of severely reduced spatial coherence since the wide area of the semiconductor wave-guide is…
A novel and simple model is proposed for the measurement of the linewidth enhancement factor (LEF) {\alpha} of multiwavelengths semiconductor laser. It is based on the suppression characteristics of an arbitrary mode while other modes are…