Related papers: Lasing in planar semiconductor diodes
We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip.…
External-cavity diode lasers are ubiquitous in atomic physics and a wide variety of other scientific disciplines, due to their excellent affordability, coherence length and versatility. However, for higher power applications, the…
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs,…
Widely-tunable and narrow-linewidth integrated lasers across all visible wavelengths are necessary to enable on-chip technologies such as quantum photonics, optical trapping, and biophotonics. However, such lasers have not been realized due…
A semiconductor diode laser having a modified Littrow external resonator is described. An additional output coupling mirror in a V-shape configuration of the resonator makes the system more efficient and convenient to operate.
Semiconductor mode-locked lasers can be used in a variety of applications ranging from multi-carrier sources for WDM communication systems to time base references for metrology. Their packaging in compact chip- or module-level systems…
Coherent laser arrays compatible with silicon photonics are demonstrated in a waveguide geometry in epitaxially grown semiconductor membrane quantum well lasers transferred on substrates of silicon carbide and oxidised silicon; we record…
Because surface plasmons can be confined below the diffraction limit, metallic lasers that support plasmonic modes can provide miniaturized sources of electromagnetic waves. Such devices often exploit a multilayer design, in which a…
Dye-doped hybrid silicate/titanium nanofilms on the glass substrate in the structure of asymmetrical waveguides were studied as the laser system. The spatial and spectral features of laser oscillation of genuine and hollow waveguides were…
We describe a teaching-lab experiment that applies basic optical spectroscopy to examine the physics of semiconductor diode lasers. By using a low-power visible laser, this experiment is suitable for use in an open lab environment, where…
We demonstrate a straight-forward technique to measure the linewidth of a grating-stabilized diode laser system---known as an external cavity diode laser (ECDL)---by beating the output of two independent ECDLs in a Michelson interferometer,…
Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration…
This work investigated the small signal performance of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3dB bandwidth dependence on the structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and…
We present a novel laser mode-locking scheme and discuss its unusual properties and feasibility using a theoretical model. A large set of single-frequency continuous-wave lasers oscillate by amplification in spatially separated gain media.…
We present here a semiconductor injection laser operating in continuous wave with an emission covering more than one octave in frequency, and displaying homogeneous power distribution among the lasing modes. The gain medium is based on a…
Simulation results, fabrication details and measurements are presented for a one dimensional aperture and grating array for the purpose of plasmonic beam shaping of the {\lambda}=3.99{\mu}m output of an optically pumped semiconductor laser.
We report on the phase-locking of two diode lasers based on self-seeded tapered amplifiers. In these lasers, a reduction of linewidth is achieved using narrow-band high-transmission interference filters for frequency selection. The lasers…
We report on a methodology for the evaluation of the DC characteristics, small-signal frequency response and large-signal dynamic response of carrier and photon density responses in semiconductor laser diodes. A single mode laser is…
Lasers with hertz-level linewidths on timescales up to seconds are critical for precision metrology, timekeeping, and manipulation of quantum systems. Such frequency stability typically relies on bulk-optic lasers and reference cavities,…
This work demonstrates a broadband tunable narrow-linewidth laser based on scattering-enhanced fiber, covering the E-S-C-L wavelength bands from 1337.47 nm to 1631.39 nm, with a total tuning span of 293.92 nm. The laser employs two…