Related papers: On the Quantum Hall Effect in graphene
Hall conductance $\sigma_{xy}$ as the Chern numbers of the Berry connection in the magnetic Brillouin zone is calculated for a realistic multi band tight-band model of graphene with non-orthogonal basis. It is confirmed that the envelope of…
The current flow along the boundary of graphene stripes in a perpendicular magnetic field is studied theoretically by the nonequilibrium Green's function method. In the case of specular reflections at the boundary, the Hall resistance shows…
Transport measurements have been a powerful tool for uncovering new electronic phenomena in graphene. We report nonlocal measurements performed in the Hall bar geometry with voltage probes far away from the classical path of charge flow. We…
We consider the conductivity $\sigma_{xx}$ of graphene with negligible intervalley scattering at half filling. We derive the effective field theory, which, for the case of a potential disorder, is a symplectic-class $\sigma$-model including…
Since its discovery, graphene has been one of the most prominent 2D materials due to its unique properties and broad range of possible applications. In particular, the half-integer Quantum Hall Effect (HI-QHE) characterized by the…
We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents…
We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and…
A close study is made of the static structure factor for graphene in a magnetic field at integer filling factors nu, with focus on revealing possible signatures of "relativistic" quantum field theory in the low-energy physics of graphene.…
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…
We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…
Materials subjected to a magnetic field exhibit the Hall effect, a phenomenon studied and understood in fine detail. Here we report a qualitative breach of this classical behavior in electron systems with high viscosity. The viscous fluid…
We investigate electronic transport in high mobility (\textgreater 100,000 cm$^2$/V$\cdot$s) trilayer graphene devices on hexagonal boron nitride, which enables the observation of Shubnikov-de Haas oscillations and an unconventional quantum…
In this paper we investigate a possibility for the existence of an analog of the Quantum Hall Effect for neutral particles with a permanent magnetic moment $\mu$ in the presence of crossed inhomogeneous magnetic and electric fields. We…
A single two-dimensional Dirac cone with a mass gap produces a quantized (spin-) Hall step in the absence of magnetic field. What happens in strong electric fields? This question is investigated by analyzing time evolution and dynamics of…
Based on a thermodynamic approach, we have calculated the resistivity of a 2D electron gas, assumed $dissipationless$ in a strong quantum limit. Standard measurements, with extra current leads, define the resistivity caused by a combination…
Fractional quantum Hall (FQH) effects in graphene are studied because of their relativistic characteristics and the valley degree of freedom. Recently FQH effects have been observed at various filling factors with graphene on a hexagonal…
We compute the magnetization of graphene in a magnetic field, taking into account for generality the possibility of a mass gap. We concentrate on the physical regime where quantum oscillations are not observed due to the effect of the…
The conductance and the Fano factor in a graphene sheet in the ballistic regime are calculated. The electrostatic potential in the sheet is modeled by a trapezoid barrier, which allows to use the exact solution of the Dirac equation in a…
We analyze the quantum Hall effect in single layer graphene with bilayer stripe defects. Such defects are often encountered at steps in the substrate of graphene grown on silicon carbide. We show that AB or AA stacked bilayer stripes result…
We investigate the quantum Hall (QH) states near the charge neutral Dirac point of a high mobility graphene sample in high magnetic fields. We find that the QH states at filling factors $\nu=\pm1$ depend only on the perpendicular component…