Related papers: Voltage-driven v.s. Current-driven Spin Torque in …
In a nanomagnet (whose total spin S< 1000), very small polarized currents can lead to magnetic reversal. Treating on the same footing the transport and magnetic properties of a nanomagnet connected to magnetic leads via tunneling barriers,…
The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…
Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods…
Spin Currents in Tunnel Junctions for example induced by thermoelectric forces due to temperature and magnetization gradients etc. are analyzed. Using Onsager theory yields directly, in particular for magnetic tunnel junctions, metallic…
We study the influence of an electric current on a continuous non-collinear antiferromagnetic texture. Despite the lack of a net magnetic moment we find that the exchange interaction between conduction electrons and local magnetization…
Understanding the flow of spins in magnetic layered structures has enabled an increase in data storage density in hard drives over the past decade of more than two orders of magnitude1. Following this remarkable success, the field of…
The theory for the quantum tunneling of nano-magnets is developed within the intermediate spin framework. Periodic magnetic effects are seen to reflect that associated with a change of flux by a single flux quantum $\Phi_{0}$. Essential are…
Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can induce steady-state magnetization precession, and has recently been proposed as a working principle for ubiquitous radio-frequency devices for radar and…
Current-induced switching is considered in a magnetic junction. The junction includes pinned and free ferromagnetic layers which work in the regime of the high spin injection. It is shown that in such a regime the exchange magnetization…
The spin-orbit torque induced by a topological insulator (TI) is theoretically examined for spin wave generation in a neighboring antiferromagnetic thin film. The investigation is based on the micromagnetic simulation of N\'{e}el vector…
The temperature and voltage dependence of spin transport is theoretically investigated in a new type of magnetic tunnel junction, which consists of two ferromagnetic outer electrodes separated by a ferromagnetic barrier and a nonmagnetic…
Angular momentum transport in magnetic multilayered structures plays a central role in spintronic physics and devices. The angular momentum currents or spin currents are carried by either quasi-particles such as electrons and magnons, or by…
We introduce a method for a combined calculation of charge and vector spin transport of elastically tunneling electrons in magnetic scanning tunneling microscopy (STM). The method is based on the three-dimensional Wentzel-Kramers-Brillouin…
Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations,…
The anomalous Hall effect is mainly used to probe the magnetization orientation in ferromagnetic materials. A less explored aspect is the torque acting back on magnetization, an effect that can be important at high currents. The spin-orbit…
We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage…
The tunneling of a giant spin at excited levels is studied theoretically in mesoscopic magnets with a magnetic field at an arbitrary angle in the easy plane. Different structures of the tunneling barriers can be generated by the…
We demonstrate a simple network-analyzer technique to make quantitative measurements of the bias dependence of spin torque in a magnetic tunnel junction. We apply a microwave current to exert an oscillating spin torque near the…
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions…
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a…