Related papers: Electron-Electron scattering and resistivity of ba…
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…
Based on an invariant embedding principle for the backscattering function we calculate the electron emission yield for metal surfaces at very low electron impact energies. Solving the embedding equation within a quasi-isotropic…
Electron transmission through nanosystems is blocked if there are no states connecting the left and the right reservoir. Electron-electron scattering can lift this blockade and we show that this feature can be conveniently implemented by…
It has long been realized that even a perfectly clean electronic system harbors a Landauer-Sharvin resistance, inversely proportional to the number of its conduction channels. This resistance is usually associated with voltage drops on the…
We measured the temperature dependence of low-frequency Raman spectra in Li$_2$RuO$_3$, and observed multipeak quasielastic scattering in the Ru honeycomb polarizations below and above the magnetostructural transition temperature. We…
Electron-electron (e-e) collisions can impact transport in a variety of surprising and sometimes counterintuitive ways. Despite strong interest, experiments on the subject proved challenging because of the simultaneous presence of different…
We show that the S-wave $\eta N$ scattering length can be extracted in a model independent way within the scope of the multichannel model, but with the restricting assumption that only one resonance is included per partial wave. One has…
We model the influence of scattering along the channel and extension regions of dual gate nanotransistor. It is found that the reduction in drain current due to scattering in the right half of the channel is comparable to the reduction in…
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is…
Resistivity augmentation in nanoscale metal interconnects is a performance limiting factor in integrated circuits. Here we present calculations of electron scattering and transmission at the interface between Cu interconnects and their…
The low-temperature($4.2<T<12.5$ K) magnetotransport ($B<2$ T) of two-dimensional electrons occupying two subbands (with energy $E_1$ and $E_2$) is investigated in GaAs single quantum well with AlAs/GaAs superlattice barriers. Two series of…
Neutral particles can couple with the $U(1)$ gauge field in the adjoint representation at the tree level if the space-time coordinates are noncommutative (NC). Considering neutrino-photon coupling in the NC QED framework, we obtain the…
It is shown that the normal electron-electron scattering is a source of electrical resistance on non-contact current excitation in two-dimensional spin-split electron systems. In contrast to the contact current injection, non-contact…
We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to…
Path integral techniques and Green functions formalism are applied to study the (time) temperature dependent scattering of a polaronic quasiparticle by a local anharmonic potential in a bath of diatomic molecules. The electrical resistivity…
We demonstrate the crucial role of small-angle scattering in transverse magnetic focusing (TMF) in ballistic GaAs/AlGaAs heterostructures. Measurements in various samples show that the role significantly depends on their geometry. We…
We study the transport in a Luttinger liquid coupled to a magnetic chain containing a Bloch domain wall. We compute the leading correction to the adiabatic limit of a long domain wall, which causes no scattering. We show that the problem is…
The inelastic light scattering in a 2-d electron gas is studied theoretically using the Boltzmann equation techniques. Electron-hole excitations produce the Raman spectrum essentially different from the one predicted for the 3-d case. In…
We consider small--angle electron--positron scattering in Quantum Electrodynamics. Leading logarithmic contributions to the cross--section are explicitly calculated to three loop. Next--to--leading terms are exactly computed to two loop.…
We consider a multi-channel correction accounting for intermediate transitions inside an equivalence class of diffractive states. Our formalism of 'diffractive limit' provides an excellent description of elastic and inclusive inelastic…