Related papers: Phonons in single and few-layer MoS2 and WS2
Raman scattering is a ubiquitous phenomenon in light-matter interactions which reveals a material's electronic, structural and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental…
Lattice structure and symmetry of two-dimensional (2D) layered materials are of key importance to their fundamental mechanical, thermal, electronic and optical properties. Raman spectroscopy, as a convenient and nondestructive tool, however…
We treat resonant Raman scattering via the multiphonon exciton transitions in cylindrical quantum dots with a parabolic confinement in the lateral direction and with a finite rectangular interface-barrier confinement in the axial direction.…
Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion with decreasing layer thickness. Molybdenum disulphide (MoS2) was recently found to exhibit indirect to direct gap…
Raman spectroscopy has become an essential technique to characterize and investigate graphene and many other two-dimensional materials. However, there still lacks consensus on the Raman signature and phonon dispersion of atomically thin…
ReS$_2$ has recently emerged as a new member in the rapidly growing family of two-dimensional materials. Unlike MoS$_2$ or WSe$_2$, the optical and electrical properties of ReS$_2$ are not isotropic due to the reduced symmetry of the…
An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The…
We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black…
We report high pressure X-ray diffraction and a detailed systematic Raman measurements on $ReS_2$ sample, which is mechanically exfoliated from a single crystal. A few new Bragg peaks are observed to emerge above 6 GPa indicating a…
The pressure dependence of a large number of phonon modes in CaFe2As2 with energies covering the full range of the phonon spectrum has been studied using inelastic x-ray and neutron scattering. The observed phonon frequency changes are in…
We have performed polarized Raman scattering measurements on the newly discovered superconductor Nd(O,F)BiS$_2$ ($T_c = 4$ K). We observe 2 Raman active modes, with frequencies in accordance with first-principles calculations. One A$_{1g}$…
It is known that carrier mobility in layered semiconductors generally increases from two-dimension (2D) to three-dimension due to suppressed scattering channels resulting from decreased densities of electron and phonon states. In this work,…
Bismuth, with its rhombohedral crystalline structure and two Raman active phonon modes corresponding to the internal displacement ($A_{1g}$) and shear ($E_{g}$) ionic motions, offers an ideal target for the investigation of the…
The pressure dependent phonon modes of predominant wurtzite InAs nanowires has been investigated in a diamond anvil cell under hydrostatic pressure up to 58 GPa. The TO and LO at Gamma point and other optical phonon frequencies increase…
Adjusting the free-electron concentration, the surface plasmon frequency of the semiconductor ZnOGa is tuned into resonance with the molecular vibrations of the n-alkane tetracontane. Closed molecular films deposited on the semiconductor's…
The dispersion relation for the collective plasma excitations of optically dressed Dirac electrons in single and double graphene layers is calculated in the random-phase approximation. The presence of circularly polarized light gives rise…
Using very uniform large scale chemical vapor deposition grown graphene transferred onto silicon, we were able to identify 15 distinct Raman lines associated with graphene monolayers. This was possible thanks to a combination of different…
In this study, we performed comprehensive investigations on the Raman active phonon modes in cubic bixbyite In$_2$O$_3$, an important oxide based, wide-bandgap semiconductor. Fundamental insights into the lattice dynamics are revealed, by…
We have investigated the effects of ozone treatment on graphene by Raman scattering. Sequential ozone short-exposure cycles resulted in increasing the $p$ doping levels as inferred from the blue shift of the 2$D$ and $G$ peak frequencies,…
We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr$_3$) with a thickness ranging from three to twenty layers (3~L to 20~L) revealed by the Raman scattering (RS) technique. Systematic…