English

Suppression of shear ionic motions in bismuth by coupling with large-amplitude internal displacement

Materials Science 2024-07-31 v2

Abstract

Bismuth, with its rhombohedral crystalline structure and two Raman active phonon modes corresponding to the internal displacement (A1gA_{1g}) and shear (EgE_{g}) ionic motions, offers an ideal target for the investigation of the phonon-phonon and electron-phonon couplings under photoexcitation. We perform transient reflectivity measurements of bismuth single crystal at 11 K over wide range of absorbed laser fluence up to Fabs=9F_\text{abs}=9 mJ/cm2^2, at which a sign of an irreversible surface damage is observed. At the minimum fluence examined (0.1 mJ/cm2^2) the coherent A1gA_{1g} and EgE_g oscillations are a cosine and a sine functions of time, as are consistent with their generations in the displacive and impulsive limits, respectively. With increasing fluence the initial phases of the both modes deviate from their low-fluence values, indicating a finite time required for the transition from the ground-state potential energy surface (PES) to the excited-state one. Surprisingly, the EgE_g amplitude increases with increasing fluence up to 3 mJ/cm2^2 and then turns to an apparent decrease, in contrast to the monotonic increase of the A1gA_{1g} amplitude up to 6 mJ/cm2^2. The contrasted behaviors can be understood by considering a two-dimensional PES, where the strongly driven A1gA_{1g} oscillation leads to a temporal fluctuation of the PES along the EgE_g coordinate and thereby to a loss in the EgE_g oscillation coherence at high fluences.

Keywords

Cite

@article{arxiv.2403.10046,
  title  = {Suppression of shear ionic motions in bismuth by coupling with large-amplitude internal displacement},
  author = {Kunie Ishioka and Oleg V. Misochko},
  journal= {arXiv preprint arXiv:2403.10046},
  year   = {2024}
}