Related papers: Interface states in two-dimensional electron syste…
We use the bulk Hamiltonian for a three-dimensional topological insulator such as $\rm Bi_2 Se_3$ to study the states which appear on its various surfaces and along the edge between two surfaces. We use both analytical methods based on the…
We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical…
Electrical currents in a quantum spin Hall insulator are confined to the boundary of the system. The charge carriers can be described as massless relativistic particles, whose spin and momentum are coupled to each other. While the helical…
We evaluate the non-equilibrium spin polarization induced by an applied electric field for a tight-binding model of electron states at oxides interfaces in LAO/STO heterostructures. By a combination of analytic and numerical approaches we…
The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films…
One-dimensional topological edge modes are usually studied considering the interface between two different semi infinite periodic crystals (PCs) with inverted band structure around the Dirac point. Here we consider the case where the two…
Spin-orbit interactions are known to have drastic effects on the band structure of heavy-element-based materials. Celebrated examples are the recently identified 3D and 2D topological insulators. In those systems transport takes place at…
In 2D topological insulators (TIs) based on semiconductor quantum wells such as HgTe/CdTe or InAs/GaSb/AlSb, spin polarized edge states have been predicted with a massless Dirac like dispersion. In a hard wall treatment based on the 4 x 4…
We show that the spin-orbit interaction (SOI) arising due to the in-plane electric field of the Coulomb repulsion between electrons in a two-dimensional quantum well produces an attractive component in the pair interaction Hamiltonian that…
An expansion of the nearly free-electron model constructed by Frantzeskakis, Pons and Grioni [Phys. Rev. B {\bf 82}, 085440 (2010)] describing quantum states at Bi/Si(111) interface with giant spin-orbit coupling is developed and applied…
Two-dimensional (2D) topological electronic insulators are known to give rise to gapless edge modes, which underlie low energy dynamics, including electrical and thermal transport. This has been thoroughly investigated in the context of…
The formation of novel two-dimensional electron gas (2DEG) with high mobility in metal/amorphous interfaces has motivated an ongoing debate regarding the formation and novel characteristics of these 2DEGs. Here we report an optical study,…
The tunability of binding energies is explored by modulating a finite dielectric slab width in a planar, three dielectric system. After verifying the equivalence of the field method and method of images, three different configurations are…
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…
Edge states reveal the nontrivial topology of energy band in the bulk. As localized states at boundaries, many-body edge states may obey a special symmetry that is broken in the bulk. When local particle-particle interaction is induced,…
The combined effect of finite potential barriers and dielectric mismatch between dot and matrix on excitonic properties of semiconductor quantum dots has been studied. To avoid the unphysical divergence in the self-polarization energy which…
Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic…
We show that an initially unpolarized electron flow acquires spin polarization after passing through a lateral barrier in two-dimensional (2D) system with spin-orbit interaction (SOI) even if the current is directed normally to the barrier.…
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility…
There is no assurance that interface states can be found at the boundary separating two materials. As a strong perturbation typically favors wave localization, it is natural to expect that an interface state should form more easily in the…