Related papers: Interface states in two-dimensional electron syste…
The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…
Topological insulators are a new class of insulators in which a bulk gap for electronic excitations is generated by strong spin orbit coupling. These novel materials are distinguished from ordinary insulators by the presence of gapless…
Spin-orbit interaction (SOI) leads to spin precession about a momentum-dependent spin-orbit field. In a diffusive two-dimensional (2D) electron gas, the spin orientation at a given spatial position depends on which trajectory the electron…
Generalized honeycomb-structured materials have received increasing attention due to their novel topological properties. In this article, we investigate zero-energy edge states in tight-binding models for such materials with two different…
We present an exact theoretical study of the effect of the spin-orbit (SO) interaction on the band structure and low temperature transport in long quasi-one-dimensional electron systems patterned in two-dimensional electron gases in zero…
We study the spin-orbit interaction effects in a one-dimensional electron system that result from the image charges in a nearby metallic gate. The nontrivial property of the image-potential-induced spin-orbit interaction (iSOI) is that it…
We study the interplay between two nontrivial boundary effects: (1) the two dimensional ($2d$) edge states of three dimensional ($3d$) strongly interacting bosonic symmetry protected topological states, and (2) the boundary fluctuations of…
We investigate correlation effects in two dimensional topological insulators (TI). In the first part, we discuss finite size effects for interacting systems of different sizes in a ribbon geometry. For large systems, there are two pairs of…
We theoretically study subgap states appearing at the interface between two three-dimensional topological insulators which have different configurations in the spin-orbit interactions from each other. The coupling of spin…
Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface…
We build a theoretical model for the electronic properties of the two-dimensional (2D) electron gas that forms at the interface between insulating SrTiO$_3$ and a number of polar cap layers, including LaTiO$_3$, LaAlO$_3$, and GdTiO$_3$.…
We solve a two-body problem for electrons in a one-dimensional system to show that two-electron bound states can arise as a result of the image-potential-induced spin-orbit interaction (iSOI). The iSOI contributes an attractive component to…
The effect of an atomically sharp impenetrable interface on the spin splitting of the spectrum of two-dimensional electrons in heterostructures based on (001) III-V compounds has been analyzed. To this end, the single band Hamiltonian…
This research investigates the implication of spin-orbit interaction (SOI) and symmetry on the band topology and spin texture at the (001) surface of BiInO$_3$. Using density functional theory (DFT) and symmetry analysis, the study explores…
The 2D TI edge states are considered within the Volkov-Pankratov (VP) Hamiltonian. A smooth transition between TI and OI is assumed. The edge states are formed in the total gap of homogeneous 2D material. A pair of these states are of…
Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive…
Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge…
The topological properties of the one-dimensional interacting systems with spatially modulated interaction in two-particle regime are theoretically investigated. Taking the boson-Hubbard model and spinless fermion interacting model as…
Nontrivial band topology along with magnetism leads to different novel quantum phases. When time-reversal-symmetry is broken in three-dimensional topological insulators (TIs) by applying high enough magnetic field or proximity effect,…
Topologically protected edge states are the highlight feature of an interface between non-equivalent insulators. The robustness/sensitivity of these states to local single-particle perturbations is well understood, while their stability in…