Related papers: Characterization of Thin Pixel Sensor Modules Inte…
Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$…
Silicon pixel detectors produced according to the ATLAS Pixel Detector design were tested in a beam at CERN in the framework of the ATLAS collaboration. The detectors used n+/n sensors with oxygenated silicon substrates. The experimental…
The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current…
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon…
Planar silicon pixel sensors with modified n$^+$-implantation shapes based on the IBL pixel sensor were designed in Dortmund. The sensors with a pixel size of $250\,\mu$m $\times$ $50\,\mu$m are produced in n$^+$-in-n sensor technology. The…
The ALICE Inner Tracking System has been recently upgraded to a full silicon detector consisting entirely of MAPS, arranged in seven concentric layers around the LHC beam pipe. Further ahead, during the LHC Long Shutdown 3, the ALICE…
Low temperature covalent direct wafer-wafer bonding allows for the fusion of multiple semiconductor wafers without any additional material at the bonding interface. In the context of particle pixel detectors this might provide an…
To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche…
The International Large Detector (ILD) is a proposed detector for the International Linear Collider (ILC). It has been designed to achieve an excellent jet energy resolution by using Particle Flow Algorithms (PFA), which rely on the ability…
Integrated photodetectors are essential components of scalable photonics platforms for quantum and classical applications. However, most efforts in the development of such devices to date have been focused on infrared telecommunications…
Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…
Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$\Omega$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation.…
The Through Silicon Via (TSV) process developed by Silex provides down to 30 micrometers pitch for through wafer connections in up to 600 micrometers thick substrates. Integrated with MEMS designs it enables significantly reduced die size…
Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm…
A front-end readout electronics system has been developed for silicon strip detectors. The system uses an application specific integrated circuit (ASIC) ATHED to realize multi-channel E&T measurement. The slow control of ASIC chips is…
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip…
We present the concept of a new type of silicon tracking sensor called Enhanced Lateral Drift (ELAD) sensor. In ELAD sensors the spatial resolution of the impact position of ionising particles is improved by a dedicated charge sharing…
Microelectronic integration is a key enabler for the ubiquitous deployment of devices in large volumes ranging from MEMS and imaging sensors to consumer electronics. Such integration has also been achieved in photonics, where compact…
The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A…
Fine-pitch hybridisation processes are essential for next-generation pixel detectors and high-density microelectronic assemblies. Conventional bump-bonding techniques, although reliable, remain costly and difficult to implement for…